国家/地区 韩国（9） 美国（6） 中国（2） 欧洲专利局（EPO）（2） 日本（2）
IPC部 H（5） C（3） D（2）
IPC大类 H01（4） C01（3） C23（2）
IPC小类 H01L（4） C01B（3） C23C（2）
IPC C01B032/186（3） H01L021/02（3） H01L029/16（3）
C23C016/26（2） H01L021/324（2） H01L029/66（2）
发明人 SHIN H（9）
公开年 2020（6） 2021（3）
申请年 2019（9）
专利权人 SAMSUNG ELEC.（6） UNIV HANYANG.（2）

Fabric used for electromagnetic wave blocking mattress, is obtained by mixing water, carbon, binder, crosslinking agent and emulsion thickener, printing on textile paper with printing ink, heat treating, and urethane coating printed surface.

SHIN H, KANG S K

Preparing graphene fiber comprises preparing dope solution in which graphene oxide sheets are dispersed in polar organic solvent, extruding dope solution into coagulating solution, diffusing polar organic solvent from extruded dope solution.

HANTAEHEE, LEE S H, EOM W, SHIN H

Gas sensor used in portable electronics, has maxine/graphene (MXene) hybrid sensing unit mounted on substrate and includes reduced graphene oxide sheets and MXene sheets, and pair of electrodes connected to MXene hybrid sensing unit.

HANTAEHEE, LEE S H, EOM W, SHIN H

Graphene structure for e.g. static RAM, has silicon substrate whose surface is arranged with graphene, where material of substrate and carbon of graphene are covalently bonded and arranged between substrate surface and graphene.

LEE E, BYUN K, SONG H, SHIN H, KIM C, SHIN K, LEE C, JUNG A, BYUN K E, SONG H J, SHIN H J, SHIN K W, LEE C S, JUNG A R

Graphene formation involves forming carbon monolayer on substrate by injecting reaction gas into reaction chamber, where former reaction gas comprises source being carbon source and including component.

SHIN H, SHIN K, KIM C, NAM S, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, SHIN H J, SHIN K W, NAM S G, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Electronic device e.g. memory device, has carbon layer having bond structure formed between substrate and ferroelectric layer, comprises nanocrystalline graphene including nano-sized crystals.

HEO J, LEE Y, JO S, SHIN K, SHIN H, XU Z, LI R, ZHAO C, SHEN J, SHEN X, HEO J S, LEE Y S, SHIN K W, SHIN H J

Interconnect structure for electronic device, has metal bonding layer for providing interfacial bonding between metal interconnect and graphene layer, where metal bonding layer includes metal material.

NAM S, SHIN H, SHIN K, KIM C, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, NAM S G, SHIN H J, SHIN K W, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C

Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.

KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C