国家/地区 日本（20） 美国（8） 世界知识产权组织（2）
IPC部 H（20） C（12） B（8）
IPC大类 H01（20） C01（12） B32（8）
IPC小类 H01L（20） C01B（12） B32B（8）
IPC H01L021/336（18） H01L029/786（16） H01L029/16（10）
H01L051/30（10） H01L051/05（9） B32B009/00（7）
H01L021/02（6） H01L021/28（6） H01L029/66（6）
H01L029/78（6） C01B032/182（5） C01B032/184（5）
H01L029/06（5） C01B032/15（4） C01B032/18（4）
发明人 TATENO Y（21）
公开年 2017（6） 2022（4） 2014（3） 2021（3） 2016（2） 2018（2）
申请年 2020（6）  2016（4）  2017（4）  2013（3） 
专利权人 SUMITOMO ELE.（21） UNIV TOHOKU（12）

Transistor comprises source electrode, drain electrode, gate electrode whose gate length direction is direction from source electrode to drain electrode, insulating base portion having surface, graphene film arranged on surface, and strip-shaped shape extending in gate width direction.

MITSUHASHI F, TATENO Y, ADACHI M, YAMAMOTO Y

Transistor for semiconductor device, has gate electrode that is arranged in contact with gate insulating film, where content ratio of oxygen included in end of gate length direction of first layer is larger than content of oxygen in central portion.

MITSUHASHI F, TATENO Y, ADACHI M, YAMAMOTO Y

Transistor has insulation layer that is arranged on second surface so as to expose portion of second surface, and first region that is positioned between gate insulating film and sauce electrode and second region is located between film and drain electrode.

MIHASHI F, TATENO Y, ADACHI M, YAMAMOTO Y

Semiconductor device, such as ffield effect transistors (FET), comprises gate electrode arranged on graphene film between source electrode and drain electrode with gate insulator film interposed between gate electrode and graphene film.

MITSUHASHI F, TATENO Y

Laminated body for electronic element, comprises silicon carbide, base portion having a first surface which is silicon surface and second surface which is surface opposite to side where base portion is located and arranged on first surface.

MIHASHI F, YONEMURA T, ADACHI M, YAMAMOTO Y, TATENO Y

Laminate used in electronic device, comprises base portion composed of silicon carbide and having specific surface which is silicon surface and graphene film on specific surface, where ion mass distribution in depth direction of laminate obtained by time-of-flight secondary ion mass spectrometry.

MIHASHI F, ADACHI M, YAMAMOTO Y, TATENO Y

Layered body useful in electronic element, such as transistor, comprises base portion comprising silicon carbide and having surface which is silicon surface, and carbon atom thin film arranged over surface and comprising carbon atoms.

MITSUHASHI F, TATENO Y, ADACHI M, YAMAMOTO Y

Laminate used for electronic device, comprises graphene film and base portion comprising silicon carbide, and has ion mass distribution in stack depth direction obtained by using bismuth ions as primary ions and cesium ions as sputter ions.

MITSUHASHI F, TATENO Y, ADACHI M, YAMAMOTO Y

Field effect transistor comprises a substrate and a graphene layer that is provided on the substrate, where drain electrode is provided on the graphene layer and a gate insulating film is provided on the graphene layer.

TATENO Y, UENO M, OKADA M, MITSUHASHI F, SUEMITSU M, FUKLDOME H, MIHASHI F, FUKIDOME H

Graphene transistor has graphene film that is arranged on support substrate, where ohmic electrode is arranged on graphene film and intermediate layer is arranged between support substrate and graphene film.

OKADA M, YONEMURA T, SUEMITSU M, FUKIDOME H, NAGASAWA H, TATENO Y