国家/地区 日本（32） 美国（29） 韩国（8） 世界知识产权组织（6） 台湾（5）
IPC部 H（36） C（21） B（12）
IPC大类 H01（36） C01（17） B82（11）
C23（9） H05（6）
IPC小类 H01L（36） C01B（17） B82Y（11）
C23C（9） H05H（4） H01B（2）
H01J（2） H05K（2）
IPC H01L023/532（28） H01L021/768（25） H01L021/3205（24）
H01L023/52（11） C01B031/02（10） H01L021/285（10）
H01L023/48（10） C23C016/26（9） H01L021/28（9）
H01L021/205（8） B82Y030/00（7） H01L023/522（7）
H01L021/02（6） C01B032/186（5） H01L023/528（5）
发明人 WADA M（37）
公开年 2015（6） 2012（5） 2013（5） 2014（5） 2016（4） 2022（4） 2021（3） 2011（2） 2023（2）
申请年 2015（7）  2011（6）  2013（6）  2022（5）  2010（3）  2014（3）  2020（3）  2012（2） 
专利权人 TOSHIBA KK（28） TOKYO ELECTR.（8） WADA M（6） KAJITA A（5）
SAKAI T（4） YAMAZAKI Y（4） ISOBAYASHI A（3） KITAMURA M（3）
SAITO T（3） KATAGIRI M（2） MIYAZAKI H（2） SAKATA A（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Substrate processing method for processing substrate, involves performing first plasma processing while holding carried-in substrate in first position, and performing second plasma processing in state where substrate support pin is lowered and substrate is held at second position.

WADA M, KABUKI N, IFUKU R, MATSUMOTO T

Foam used in laminate, comprises nano carbon material and resin and has preset point impact-absorbing rate and preset heat conductivity of thickness direction measured by xenon flash method.

NEGISHI M, WADA M, SATO T

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Processing device for forming film, consists of processing container having thermal sprayed ceramic coating on inner wall, mounting table for holding substrate and control unit for performing precoating and film forming.

WADA M, MATSUMOTO T, SUGIURA M, IFUKU R, UEDA H, KURYOTA L

Manufacture method of semiconductor device, involves forming graphene interconnect by patterning graphene film into which dopant is introduced.

WADA M, YAMAZAKI Y, MIYAZAKI H, KAJITA A, SAITO T, ISOBAYASHI A, ISHIKURA T, KATAGIRI M, SAKAI T