国家/地区 美国（15）
IPC部 H（14） B（9） C（5）
IPC大类 H01（14） B82（8） C30（3）
C01（2） C23（2）
IPC小类 H01L（14） B82Y（6） C30B（3）
B82B（2） C01B（2） C23C（2）
IPC H01L033/00（9） H01L033/02（9） H01L033/12（6）
B82Y099/00（5） H01L021/02（5） H01L033/10（5）
H01L033/40（5） H01L021/20（4） H01L029/16（3）
H01L033/36（3） B82B001/00（2） C30B025/04（2）
C30B025/18（2） H01L021/205（2） H01L021/36（2）
发明人 WEI Y（15）
公开年 2013（10） 2014（3）
申请年 2012（10）  2014（4） 
专利权人 HON HAI PREC.（14） UNIV TSINGHU.（14） HONGFUJIN PR.（11） WEI Y（6）
FAN S（5）

Semiconductor structure used in semiconductor device such as transistor, has metallic carbon nanotube, semiconductor layer and graphene layer that are stacked with each other to form three-layered stereoscopic structure.

ZHANG K, WEI Y, FAN S

Composition used for forming anticorrosive layer, comprises polymer chosen from poly(methyl methacrylate), polystyrene, polyethylene, polypropylene, and polycaprolactone, and nanoparticles chosen from graphene and amino modified silica.

YEH J, CHANG K, HSU C, JI W, HSU M, LU H, LAI M, LIU P, CHUANG T, WEI Y, LIU W, HSIAO Y, YEH J M, CHANG K C, HSU C H, JI W F

LED used as light source in optical imaging system such as display, projector has graphene layer having apertures, which is located between active layer and semiconductor layer.

WEI Y, FAN S

Vertical structure LED for use as light source in e.g. display, has graphene layer located between active layer and semiconductor layer and comprising apertures and graphene film consisting of layer of continuous carbon atoms.

WEI Y, FAN S

LED for use as light source in e.g. projector, has electrode electrically connected with semiconductor layer, and graphene layer located between active layer and semiconductor layer and defining set of apertures.

WEI Y, FAN S

Epitaxial structure comprises an epitaxial layer defining a patterned surface and a graphene layer on the patterned surface of the epitaxial layer.

WEI Y, FAN S

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Epitaxial structure comprises substrate having epitaxial growth surface, first epitaxial layer on epitaxial growth surface, graphene layer on first epitaxial layer and second epitaxial layer on first epitaxial layer.

WEI Y, FAN S

Making epitaxial structure which is useful to produce electronics comprises forming patterned epitaxial growth surface of substrate, making graphene layer and epitaxially growing epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S