国家/地区 中国（11）
IPC部 H（8） B（5） C（2）
IPC大类 H01（8） B82（3） C01（2）
IPC小类 H01L（7） B82Y（3） C01B（2）
IPC B82Y010/00（2） C01B031/04（2） H01L021/02（2）
H01L021/04（2） H01L029/49（2） H01L029/78（2）
发明人 WEI Z（11）
公开年 2012（11）
申请年 2012（9）  2011（2） 
专利权人 UNIV PEKING（10）

Graphene-emitting diode structure for diode logic gate, has rectangle portions that are connected with graphene nanostructures, and graphene nanostructure that is composed of negative type and positive type doping graphene nanostructure.

FU Y, HUANG R, REN L, ZHAO H, WEI Z, ZHANG X, YE T

Preparing graphene nanometer belt for making integrated circuit, involves preparing graphene on substrate, using metal nano-particles, etching along graphene preferred direction in annealing process, in boundary domain function of graphene.

FU Y, HUANG R, WEI Z, ZHANG X, YE T, ZHOU M

Etching of multi-layered graphene involves forming multi-layered graphene on substrate, forming bands with specific height on substrate, annealing substrate by supplying argon/hydrogen, and then naturally cooling substrate.

FU Y, HU B, HUANG R, WEI Z, ZHANG X, YE T

Manufacture of metal inductor for wireless communication application, involves forming lower metal layer and insulating dielectric layer, etching, depositing diffusion barrier layer and metal seed layer, and growing graphene layer.

FU Y, HUANG R, LI C, REN L, WEI Q, WEI Z, ZHANG X, ZHOU M

Preparation of atom scale graphene groove, e.g. for nano-electronics field, by suspending graphene on high temperature resistant substrate, depositing metal atoms on surface, etching in argon/hydrogen atmosphere, cooling, and vacuum-drying.

FU Y, HUANG R, LI C, WEI Z, ZHANG X, YE T

Silicon dioxide pattern processing method involves transferring image of graphene to silicon dioxide substrate after etching silicon dioxide film by etching solution.

FU Y, HUANG R, LI P, REN L, ZHAO H, WEI Z, ZHANG X

Preparation of oxygen-reduced non-noble metal catalyst used in fuel cell on electric automobile, comprises dispersing layered compound inter-layer nitrogen mixed graphene in ethanol, adding hydrofluoric acid, washing, drying, and grinding.

DING W, ZHANG W, CUI S, QI X, LI L, JI W, CHEN S, WEI Z

Graphene FET for flexible display device, has graphite alkene material with source and drain electrode that is provided with wrapping medium layer on graphene material through zinc oxide nano-meter wire.

FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H

Integrated circuit metal interconnection structure, has upper layer metal interconnection connected with metal through hole, and single layer or multi-layer graphene arranged on surface of upper layer metal interconnection.

CAO Y, CUI X, FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H

Carbon-based nanometer material transistor preparing method, involves leading electrodes at two ends of carbon nanometer tube, and depositing conductive material at two ends of graphene for forming electrode.

CAO Y, CUI X, ZHANG X, HUANG R, FU Y, ZHAO H, WEI Q, WEI Z, YIN J