国家/地区 中国（17） 日本（3） 美国（2）
IPC部 H（14） C（6） B（4）
G（2）
IPC大类 H01（14） C01（4） C30（4）
B82（3） C23（3） G01（2）
IPC小类 H01L（14） C01B（4） C30B（4）
B82Y（3） C23C（3）
IPC H01L021/336（7） H01L021/28（5） B82Y040/00（3）
C01B032/186（3） C23C016/26（3） C01B032/182（2）
C23C014/06（2） C30B023/00（2） C30B025/00（2）
C30B029/02（2） H01L021/04（2） H01L029/78（2）
H01L039/12（2） H01L039/24（2） H01L043/06（2）
发明人 XIE H（18）
公开年 2014（6） 2015（4） 2016（4） 2013（3）
申请年 2015（5）  2013（4）  2014（4）  2012（2）  2016（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（18）

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Quantum interference device structure for use in sensors and other devices, comprises first superconductor layer and first dielectric layer, graphene layer, second dielectric layer, metal layer and second superconducting layers.

WANG H, XIE H, LI L, YANG P, XIE X, JIANG M

Method for preparing quantum hall device, involves forming superconducting thin film layer on substrate, covering with dielectric thin film layer, and forming graphene layer, followed by forming metal electrode.

WANG H, XIE H, WANG X, XIE X, JIANG M

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparation of magnetic field sensor used in semiconductor field, involves forming polypropylene carbonate-hexagonal boron nitride structure on substrate, placing polydimethylsiloxane film, adsorbing graphene film, and etching.

JIANG M, LI L, XIE X, XIE H, WANG H

Graphene device structure contact electrode preparation method, involves structure section arranged on linear graphene edge, depositing metal covered with section structure, and one-dimensional graphene connected with metal electrode.

DENG L, HE L, JIANG M, LI L, XIE X, ZHANG D, XIE H, WANG H, CHEN L

In-situ growth of graphene-based field effect transistor micro zone heating materials, comprises preparing graphene-based field effect transistor, applying voltage on ends of graphene electrode and allowing the growth of the material layer.

DENG L, HE L, JIANG M, LI L, XIE X, WU T, XIE H, WANG H, CHEN L

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Manufacture of graphene flash memory involves patterning conductive layer formed on semiconductor substrate, forming source/drain electrodes, dielectric layers, graphene layer and gate electrode, and etching dielectric layers.

WANG H, JIANG M, LI L, XIE X, WU T, CHEN J, LU G, XIE H, ZHANG X