国家/地区 中国（9）
IPC部 C（6） H（4） B（3）
IPC大类 H01（4） C01（2） C08（2）
C09（2） C23（2）
IPC小类 H01L（4） C01B（2） C09C（2）
C23C（2）
IPC C09C001/46（2） C23C016/26（2） H01L043/06（2）
H01L043/14（2）
发明人 XIE X（10）
公开年 2016（10）
申请年 2016（6）  2014（2）  2015（2） 
专利权人 SHANGHAI INS.（7）

Transferring graphene to target substrate used to obtain multilayer graphene, involves depositing graphene on first substrate, covering graphene with buffer layer and adhering heat release adhesive tape on buffer layer.

CHEN J, WU T, WANG H, XIE X

Multi-element composite texture oriented sliding friction pair contains partial micro-pits that are adhered with solid lubricant comprising polyimide, nano molybdenum disulfide, carbon nanotubes, graphene, fullerene, and adhesive.

HUA X, JIE X, ZHANG P, SUN J, WANG H, DING J, HAO J, XIE X

Quantum interference device structure for use in sensors and other devices, comprises first superconductor layer and first dielectric layer, graphene layer, second dielectric layer, metal layer and second superconducting layers.

WANG H, XIE H, LI L, YANG P, XIE X, JIANG M

Method for preparing quantum hall device, involves forming superconducting thin film layer on substrate, covering with dielectric thin film layer, and forming graphene layer, followed by forming metal electrode.

WANG H, XIE H, WANG X, XIE X, JIANG M

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Hyperbranched polytriazole functionalized graphene is formed by modifying graphene surface with aromatic hyperbranched polytriazole in presence of catalysts dicyclohexylcarbodiimide and 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide.

CHEN F, LV S, XIE X, YE Y, ZHOU X

Preparation of metal vapor auxiliary layer rapid growth graphene comprises taking copper-nickel alloy substrate, washing, placing in chemical vapor deposition chamber, positioning, sparging with argon and methane, and growing.

JIANG M, LU G, XIE X, YANG C, WU T, ZHANG X, WANG H

Doped graphene preparing method, involves forming nickel thin film layer on copper substrate, and N-type graphene and P-type doped graphene formed respectively on N-type doped element-rich area and P-type doped element-rich zone.

DI Z, CHEN D, DING G, GUO Q, MA J, WANG G, XIE X, XUE Z, ZHANG M, ZHENG X, DAI J

Preparation of magnetic field sensor used in semiconductor field, involves forming polypropylene carbonate-hexagonal boron nitride structure on substrate, placing polydimethylsiloxane film, adsorbing graphene film, and etching.

JIANG M, LI L, XIE X, XIE H, WANG H

Nano composite material useful in vulcanized rubber for preparing tyres comprises silica, graphene oxide attached to silica and oxidized graphene and surface modifying agent.

XIE X, LI S, JIANG K, LIU C, LIU P, QU L, QIAO X, WANG L, ZHAO Q, YU G