国家/地区 韩国（15） 美国（12） 中国（5） 日本（4）
IPC部 H（14） B（8） C（3）
IPC大类 H01（13） B82（7） B32（2）
C01（2） C09（2）
IPC小类 H01L（12） B82Y（7） B32B（2）
C01B（2） C09K（2） H01B（2）
IPC H01L029/78（11） H01L021/336（9） B82Y099/00（6）
H01L029/06（5） H01L029/16（5） H01L029/786（5）
H01L029/772（4） H01L029/08（3） H01L029/10（3）
H01L029/417（3） H01L029/778（3） H01L051/05（3）
H01L051/30（3） B82Y010/00（2） B82Y040/00（2）
发明人 YANG H J（15）
公开年 2012（7） 2013（4） 2022（2）
申请年 2011（7）  2012（2）  2022（2） 
专利权人 SAMSUNG ELEC.（12） ELEMENT CO L.（3） SNU R DB FOU.（2） UNIV SEOUL N.（2）

Graphene-ceramic heat dissipation material with improved electrical insulation and resin miscibility comprises first dispersion solution is dispersed and second dispersion solution in which ceramic heat-dissipating filler is pulverized.

KYOUNGJEONGBAE, CHO J I, YANG H J, SONG H, SU Y C

Manufacturing graphene-coated heat dissipation filler comprises oxidizing graphite powder by mixing oxidizing solution and preparing graphene coating solution by dispersing reduction-treated graphite powder in solvent.

KYOUNGJEONGBAE, SU Y C, YANG H J, SONG H

Method for manufacturing transparent electrode panel for e.g. cellular phone, involves forming substrate including printed portion coated with graphene composite solution and non-coated portion.

BAE K J, JO J W, YANG H J

Graphene device has insulating layer which is provided between graphene layer and gate electrode, and semiconductor substrate is provided with tunable Schottky barrier formed by junction of source electrode, graphene layer and substrate.

CHUNG H, SEO D, PARK S, BYUN K, SONG H, YANG H, HEO J, CHUNG H J, PARK S J, BYUN K E, SONG H J, YANG H J, HEO J S

Three-dimensional zero gap semiconductor graphene switching device, has graphene layer surrounding end portion of semiconductor layer, and gate insulation layer surrounding graphene layer, where gate surrounds insulation layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, YANG H, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, YANG H J, CHUNG H J

Electrode structure for semiconductor device e.g. FET used in electronic device, has graphene layer that is configured to contact one of semiconductor layer and electrode containing metal.

YANG H, PARK S, CHUNG H, HEO J, YANG H J, PARK S J, CHUNG H J, HEO J S, HUH J, JUNG H

Graphene switching device with tunable barrier used as diode, triode, or transistor has graphene layer which is formed between semiconductor layer and gate substrate.

HEO J, CHUNG H, SONG H, PARK S, SEO D, YANG H, HEO J S, JEONG H J, SONG H J, PARK S J, DAVID S, YANG H J, CHUNG H J, HUH J, SONG C, SERIO D, JUNG H

Method for transferring graphene, involves forming trench on substrate, arranging graphene layer using additive liquid on substrate, pressurizing graphene layer on substrate, and removing additive liquid from substrate by drying.

SEOK S H, SEONG H J, JONG J H, JUN Y H, JUN P S, JAE S H, SEO D, HEO J, CHUNG H, YANG H, PARK S, SONG H, HEO J S, CHUNG H J, YANG H J, PARK S J, SONG H J

Graphene electronic device e.g. back gate FET, has graphene channel layer extending between metals, and source electrode and drain electrode provided on edges of channel layer and formed to have thickness of specific range.

HEO J, CHUNG H, SEO S, LEE S, YANG H, HEO J S, CHUNG H J, SEO S A, LEE S H, YANG H J, JEONG H J, HUH J, JUNG H

Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H