国家/地区 中国（20）
IPC部 C（9） B（5） F（5）
H（3） G（2）
IPC大类 F25（3） H01（3） B01（2）
B23（2） C02（2） C08（2）
C09（2） C10（2） F24（2）
IPC小类 F25B（3） B01J（2） B23K（2）
C02F（2） C08K（2） C10M（2）
IPC F25B021/02（3） B23K035/40（2） C08K003/04（2）
C08K003/22（2）
发明人 YU H（20）
公开年 2015（20）
申请年 2015（17）  2014（3） 
专利权人 TANG Y（6） YU H（6） HARBIN INST .（2） SHANGHAI INS.（2）
UNIV NORTH C.（2）

Preparation of three-dimensional ordered carbon-coated iron-based/graphene anode material used for lithium-ion battery, involves dispersing graphene oxide in water, adding iron source, centrifuging mixture and calcining composite.

HAN S, HUANG Y, LI Y, JIANG J, LIN H, PEI S, QIU F, WANG C, YU F, ZHU J, ZHOU Z, YU H, WANG X, LU D

Semiconductor heating plate, has power supply unit connected with metal conductor, N-type semiconductor and P-type semiconductor that are connected with graphene unit, and heat radiator formed with heat radiator graphene layer.

TANG Y, YU H

Open cooling device, has power supply unit connected with electrodes, and N-type semiconductor formed with graphene layer, where P-type semiconductor and N-type semiconductor are formed with uniform graphene unit.

TANG Y, YU H

Cooling device, has graphene layer fixed with P-type semiconductor, and heat conductor connected with heat radiating sheet, where P-type semiconductor is connected with N-type semiconductor that is fixed with graphene layer.

TANG Y, YU H

CPU radiating device, has semiconductor refrigerating sheet arranged with N-type semiconductor and P-type semiconductor, where semiconductor refrigerating sheet and N-type and P-type semiconductors are fixed with graphene layer.

TANG Y, YU H

Semiconductor heating device, has P-type semiconductor and N-type semiconductor respectively arranged between heat end part and cold end part, where P-type semiconductor and N-type semiconductor are made of graphene material.

TANG Y, YU H

Semiconductor water heater, has N-type semiconductor and P-type semiconductor provided with uniform graphene, and heating pipe fixed with graphite alkene heat guide part, where heat insulation layer is formed on heating pipe.

TANG Y, YU H

Preparation of graphene oxide adsorption material for adsorption of copper ion, involves dissolving graphene oxide-triethylenetetramine black powder samples in water, adding hydrochloric acid and potassium cyanate and washing.

YU H, ZHANG K

Cadmium-zinc-tellurium photoelectric detector has structure including fluorine-doped tin oxide conductive glass substrate, cadmium-zinc-tellurium film, graphene transition layer and gold electrode, and having ohmic contact interface.

HUANG J, MENG H, XU R, TAO J, WANG L, YU H, ZHANG J, ZHANG Y, CHEN M

Radiation-proof material for electronic device, comprises graphite powder, iron powder, ferrite powder, calcium carbonate, graphene/bismuth molybdate, titania, dispersed pigment, antiaging agent, dispersant, and engineering plastic.

YU H