国家/地区 中国（24）
IPC部 H（18） C（9）
IPC大类 H01（18） C01（8） C04（3）
IPC小类 H01L（18） C01B（8） C04B（3）
IPC C01B031/04（8） H01L021/336（4） H01L029/78（4）
H01L029/786（4） C04B041/50（3） C04B041/85（3）
H01L029/423（3） H01L021/02（2） H01L021/04（2）
H01L021/335（2） H01L031/109（2） H01L031/18（2）
发明人 ZHANG C（25）
公开年 2013（16） 2012（3） 2018（2） 2021（2）
申请年 2012（10）  2013（9）  2018（2）  2020（2） 
专利权人 UNIV XIDIAN（25）

Van der Waals epitaxial gallium nitride high electron mobility transistor device useful in power electronic system, has through hole opened in middle of substrate, two-dimensional material layer, first aluminum nitride layer, and second aluminum nitride layer.

HAO Y, MA P, ZENG Y, ZHANG C, ZHAO J, ZHANG J, WANG D, WU J, NING J

Low-leakage gallium nitride Schottky barrier diode (SBD) device has fluorinated material passivated layer is located above aluminum gallium nitride layer, and cathode metal that is located on both side above aluminum gallium nitride layer.

NING J, ZHANG C, WANG D, ZHANG J, MA P, HAO Y

Self- driven ultra-wide spectrum photo-detector based on n-gallium nitride-p-gallium selenium-graphene hetero-junction, has graphene layer which is separated from nickel/gold electrode and gold electrode respectively.

NING J, ZHOU Y, WANG D, SHEN X, ZHANG C, ZHANG J, MA P, HAO Y

Method for preparing graphene intercalation structured-gallium nitride-based LED device, involves magnetron sputtering aluminum nitride film on sapphire substrate, followed by allowing to high temperature annealing alloying.

NING J, ZHANG C, WANG D, ZHANG J, SHEN X, CHEN Z, MA P, HAO Y

Method for preparing gallium nitride based photoelectric detector, involves magnetron sputtering aluminum nitride film on sapphire substrate and growing single layer of graphene on copper substrate by chemical vapor deposition.

NING J, SHEN X, WANG D, ZHANG J, ZHANG C, CHEN Z, MA P, HAO Y

Graphene/zinc oxide-perovskite-based solar cell, comprises substrate, cathode, electron transmitting layer, light active layer, hole transmission layer and anode.

HAO Y, LUO L, TANG S, ZHANG C, ZHANG J, CHEN D, XI H

Graphene FET has source electrode and drain electrode that are respectively located at two ends of graphene channel layer.

ZHANG P, BAO J, MA Z, WU Y, ZHUANG Y, ZHANG C

Graphene nano-belt FET, has gate dielectric layer placed at upper and lower sides of channel layer, substrate formed with gate dielectric layer, and source electrode and drain electrode placed at two ends of channel layer.

ZHANG P, BAO J, MA Z, WU Y, ZHUANG Y, ZHANG C

Graphene nanoribbon FET comprises gate dielectric layers that are respectively located at upper side and lower side of channel layer, and source and drain electrodes that are respectively located at ends of channel layer.

ZHANG P, WU Y, BAO J, MA Z, ZHUANG Y, ZHANG C

Preparation of graphene on silicon carbide substrate used for manufacturing microelectronic devices and biological sensors, involves washing silicon carbide substrate, and placing in graphene growth device with argon gas and chlorine.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X