国家/地区 中国（19）
IPC部 C（19）
IPC大类 C01（13） H01（6） C08（5）
B82（3） C23（3） C03（2）
IPC小类 C01B（13） H01L（6） C08K（4）
C08L（4） B82Y（3） C08J（3）
C23C（3） C03C（2） C08G（2）
IPC C01B031/04（12） H01L021/02（5） C08K003/04（4）
C08K009/06（3） C08L007/00（3） C08L009/02（3）
C08L009/06（3） B82Y040/00（2） C03C017/22（2）
C08K009/02（2） C08K009/04（2） C08L007/02（2）
C08L009/00（2） C08L009/10（2） C08L011/00（2）
发明人 ZHANG F（19）
公开年 2012（19）
申请年 2012（16）  2011（3） 
专利权人 UNIV XIDIAN（12） ZHANG F（4） LIU L（3） MAO Y（3）
UNIV BEIJING.（3） WEN S（3） BOE TECHNOLO.（2）

Graphene/cyanate ester/bimaleimide composite material comprises graphene oxide-modified hyperbranched polysiloxane, bismaleimide prepolymer containing bisphenol A diallyl ether and bisphenol A type cyanate resin.

ZHANG M, YAN H, GONG C, ZHANG F

Preparing structured graphene, comprises cleaning silicon substrate and vacuumizing, introducing propane into the substrate to carbonize, performing heteroepitaxial growth, and cooling the epitaxial cubic silicon carbide film.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structured graphene on silicon carbide substrate useful for preparing microelectronic device, involves cleaning silicon carbide sample sheet, depositing layer of silicon dioxide and nickel film annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of patterned graphene film by forming wetting area of predetermined pattern on substrate, forming non-soakage area on substrate, coating graphene oxide solution on wetting area, and performing reduction treatment.

DAI T, LIU Z, YAO Q, ZHANG F

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Method for preparing structured graphene used for manufacturing microelectronic device, involves depositing silicon dioxide on silicon carbide wafer, forming structured pattern and carbon film, depositing nickel film and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structured graphene by depositing silicon dioxide layer on silicon carbide wafer surface, scribing graphics window, reacting carbon tetrachloride with naked silicon carbide, putting wafer on copper film, and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structured graphene by depositing silicon dioxide layer on silicon carbide surface, etching pattern window, reacting silicon carbide with chlorine, removing silicon dioxide outside window, putting on copper film and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structural graphene for microelectronic devices, involves growing carbon-silicon carbide thin film and silica layer on substrate, forming nickel film on other sample, placing silica layer on nickel film, and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structured graphene by growing carbonization zone layer on substrate, growing cubic silicon carbide thin film, depositing silicon dioxide, carving graphics window, and reacting exposed cubic silicon carbide film with chlorine.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F