国家/地区 中国（12） 美国（2）
IPC部 H（9） C（5） B（2）
IPC大类 H01（9） C01（3） B82（2）
C09（2）
IPC小类 H01L（9） B82Y（2） C01B（2）
C09K（2）
IPC H01L029/786（7） H01L021/336（5） B82Y030/00（2）
B82Y040/00（2） C01B031/04（2） H01L021/04（2）
发明人 ZHANG K（13）
公开年 2013（9） 2014（4）
申请年 2013（13）
专利权人 UNIV XIDIAN（8）

Thermal interface material used to increase thermal conduction or thermal dissipation across interface comprises three-dimensional interconnected porous graphene foam structure constructed of three-dimensional interconnected graphene sheets.

YUEN M M F, ZHANG X, YEUNG K K, GAO Z, ZHANG K, ZHANG M, XU H

Manufacture of graphene-doped polyaniline-coated nickel zinc ferrite mesoporous material for e.g. electromagnetic wave absorbing material involves mixing magnetic nanoparticles with potassium permanganate, calcining, and cooling.

XIE Y, HU D, LIU F, WANG Y, LE Z, ZHANG K, PAN J

Preparation of graphene-reinforced magnetic hydrogel comprises mixing polyvinyl alcohol and pure water, stirring, heating, freezing, thawing, repeating, and adding graphene oxide and ferroferric oxide.

LI Y, ZHAO J, ZHANG K

Color nanocomposite comprises amino-functionalized surface of graphene oxide and carboxyl-modified manganese-doped nanocrystals, where the carboxyl-modified manganese-doped nanocrystals comprise covalent coupling and mercapto group.

WANG S, ZHANG K

Growing multilayer graphene film used to form flexible transparent electrode, comprises disposing carbonizing catalyst in reaction chamber, flowing gaseous carbon source/weak oxidizing vapor over catalyst surface, and cooling.

LOH K P, ZHANG K, CASTRO A H, LOH K

Manufacture of side grid graphene transistor involves depositing nickel membrane on graphene, annealing, depositing metal palladium/gold layer on graphene sample wafer, forming metal electrode, forming photomask, and drying.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C

Method for preparing annealing film of chlorine reaction side-gate graphene of thin film transistor, involves etching side gate structure transistor image window on Silicon dioxide mask layer, and heating pattern of window in quartz tube.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C

Manufacture of side-grid graphene transistor involves preparing film having patterns, heating, obtaining carbon film, placing in buffer solution, heating with copper film, evaporating, depositing, photoetching and drying.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG K, HU Y

Method for preparing side grid graphene transistor, involves cleaning silicon carbide, depositing silica mask layer, etching side gate structure transistor image window on silica mask layer, and forming pattern of window set in quartz tube.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG K, HU Y

Manufacture of side grid graphene transistor involves preparing carbon-silicon carbide film, depositing silicon dioxide layer, etching, carving side grid, removing silicon dioxide layer, annealing, forming metal layers and etching.

HU Y, ZHANG Y, GUO H, LEI T, WEI C, ZHANG K