国家/地区 中国（13）
IPC部 H（9） B（6） C（4）
IPC大类 H01（9） B82（5） C01（3）
IPC小类 H01L（8） B82Y（5） C01B（3）
IPC C01B031/04（3） B82Y010/00（2） B82Y040/00（2）
H01L021/04（2） H01L027/15（2） H01L029/49（2）
H01L029/78（2）
发明人 ZHAO H（13）
公开年 2012（6） 2013（4） 2011（3）
申请年 2012（4）  2013（4）  2011（3）  2010（2） 
专利权人 UNIV PEKING（13）

Preparing graphene nanopores comprises growing graphene by chemical vapor deposition, preparing graphene layer on metallic copper thin film, etching back surface of graphene coated metallic copper thin film and etching with acid solution.

FU Y, GUO J, HUANG R, LI C, REN L, ZHAO H, WEI Z, ZHANG X, HU B, ZHOU M

Transferring graphene thin film involves using diluted acid solution to the metal substrate to react to generate hydrogen gas bubbles to separate the graphene layer and the metal substrate.

FU Y, HUANG R, LI C, REN L, ZHAO H, WEI Z, ZHANG X, HU B, ZHOU M

Corrosion resistant electrode for e.g. plugs of electronic device, has metal electrode surface covered with graphene for acting as corrosion resistant electrode, where graphene is provided as single layer, double layer or multiple layers.

FU Y, GUO J, HUANG R, LI C, REN L, ZHANG L, ZHAO H, WEI Z, ZHANG X, HU B, ZHOU M

Preparation of carbon nanotube composite material for batteries and capacitor involves performing chemical vapor deposition to obtain single-layered graphene or multi-layered graphene carbon material, and transferring graphene to substrate.

HUANG R, ZHANG L, FU Y, LI C, ZHAO H, WEI Z, ZHANG X, GUO J, REN L, HU B, ZHOU M

Graphene-emitting diode structure for diode logic gate, has rectangle portions that are connected with graphene nanostructures, and graphene nanostructure that is composed of negative type and positive type doping graphene nanostructure.

FU Y, HUANG R, REN L, ZHAO H, WEI Z, ZHANG X, YE T

Silicon dioxide pattern processing method involves transferring image of graphene to silicon dioxide substrate after etching silicon dioxide film by etching solution.

FU Y, HUANG R, LI P, REN L, ZHAO H, WEI Z, ZHANG X

Graphene FET for flexible display device, has graphite alkene material with source and drain electrode that is provided with wrapping medium layer on graphene material through zinc oxide nano-meter wire.

FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H

Integrated circuit metal interconnection structure, has upper layer metal interconnection connected with metal through hole, and single layer or multi-layer graphene arranged on surface of upper layer metal interconnection.

CAO Y, CUI X, FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H

Carbon-based nanometer material transistor preparing method, involves leading electrodes at two ends of carbon nanometer tube, and depositing conductive material at two ends of graphene for forming electrode.

CAO Y, CUI X, ZHANG X, HUANG R, FU Y, ZHAO H, WEI Q, WEI Z, YIN J

Method for manufacturing graphene transistor, involves transferring graphene to upper part of groove structure of carbon nano-tube, and educing conductive materials deposited on two ends of graphene.

CAO Y, CUI X, FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H