国家/地区 美国（63） 世界知识产权组织（37） 韩国（34） 中国（33） 日本（33） 欧洲专利局（EPO）（18） 台湾（8） 德国（3） 法国（3） 新加坡（3） 巴西（2） 加拿大（2） 香港（2） 印度（2）
IPC部 B（72）
IPC大类 B82（72）
IPC小类 B82Y（72）
IPC B82Y040/00（72）
发明人 HONG B H（6） AHN J（4） HONG B（4）
JIANG K（4） LIN X（4） PARK K（4）
AHN J H（3） CHOI J（3） CHOI J Y（3）
FAN F Y（3） FAN S（3） LEE Y（3）
LIN X Y（3） SHIN H（3） SHIN H J（3）
公开年 2012（37） 2013（18） 2011（17）
申请年 2011（72）
专利权人 UNIV SUNGKYU.（7） SAMSUNG ELEC.（5） HON HAI PREC.（4） HONGFUJIN PR.（4）
SAMSUNG TECH.（4） UNIV TSINGHU.（4） EMPIRE TECHN.（3） GRAPHENE SQU.（3）
HANWHA TECHW.（3） KOREA INST S.（3） SONY CORP（3） BASF SE（2）
CENT NAT REC.（2） COMMISSARIAT.（2） ELECTRONICS .（2） HONG B（2）
INT BUSINESS.（2） KOREA ADV IN.（2） MAX PLANCK G.（2） NAT CENT NAN.（2）

Manufacture of nanowire for optical element, involves forming metal microparticles on graphene, and forming nanowire of specific group compound by organometallic vapor phase epitaxy.

TATENO K, SASAKI S, HIBINO H, ZHANG G Q, SHO K

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

System used in e.g. conductive paint, conductive lacquer and electromagnetic shielding comprises device containing a hybrid composite that comprises tubular carbon and graphene in the form of graphene flake or graphene nano platelets.

NGUYEN K C, HIEU D, KHE N, NGUYEN C K, DINH H

Manufacture of graphene transparent electrode for e.g. solar cell, involves providing graphene oxide solution, forming thin metal film on substrate, coating graphene oxide, drying, compressing transparent film layer and etching.

CHEON K U, HEON H G, KIM W C, HUR K H

Making graphene layers involves forming article that comprises carbon-containing self-assembled monolayer; depositing layer of nickel on monolayer; heating article in reducing atmosphere; and cooling to convert monolayer to graphene layer.

MALIAKAL A J

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Preparation of graphene-carbon nanocomposite transparent conductive thin film by mixing oxide-containing graphite and carbon precursor dispersion liquid, placing on substrate film, carbonizing carbon precursor and mixing oxidized graphite.

FANG Y, ZHANG X, LUO B, JIA Y, HE H, QIU T, LIANG M, WANG J, ZHI L

Manufacture of graphene thin film for transparent electrode, involves causing deposition plate which contacts with substrate to perform reciprocating linear motion above substrate, and coating graphene oxide solution.

CHANG S T, KO Y U, TAE J S, UN K Y, KO Y

Manufacture of single crystal insulated substrate for electronic device involves preparing single crystal insulated substrate, fixing graphene to substrate surface, and positioning protein which has core particle on graphene.

OGINO T, TSUKAMOTO T, IIDA Y, KOYAMA K