国家/地区 日本（104）
IPC部 C（104）
IPC大类 C01（104）
IPC小类 C01B（104）
IPC C01B031/02（104）
发明人 CHIBA Y（7） FAN F Y（6） FAN S（6）
HASEGAWA M（5） JIANG K（5） LIN X（5）
XIAO L（5） CHIBA G（4） HONG B H（4）
LIN X Y（4） VEERASAMY V（4） VEERASAMY V S（4）
YAMADA T（4） BAE S K（3） CHIBA YOSHIHIRO（3）
公开年 2013（28） 2012（21） 2011（16） 2015（11） 2014（9） 2016（7） 2010（4） 2017（3） 2009（2）
申请年 2012（28）  2011（20）  2010（14）  2013（13）  2014（9）  2015（7）  2009（5）  2001（2）  2008（2）  2016（2） 
专利权人 JX NIPPON MI.（8） DOKURITSU GY.（7） HON HAI PREC.（6） HONGFUJIN PR.（6）
NIPPON MININ.（6） SAMSUNG ELEC.（6） UNIV TSINGHU.（6） GUARDIAN GLA.（4）
GUARDIAN IND（4） GUARDIAN IND.（4） NIPPON MININ.（4） ULVAC INC（4）
UNIV NAGOYA（4） FUJI ELECTRI.（3） FUJITSU LTD（3） GRAPHENE SQU.（3）
NAT INST ADV.（3） TE CONNECTIV.（3） TOKYO ELECTR.（3） TYCO ELECTRO.（3）

Continuous method for preparing film comprising graphene, involves advancing metal substrate having graphene-comprising layer out of processing chamber, and separating graphene-comprising layer to form film comprising graphene.

HARUTYUNYAN A, HARUTYUJAN A

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Low-reflection graphene used in e.g. optical component, comprises graphene layer having surface parallel to specific direction, and another graphene layer in direction which intersects specified direction, where both layers form recess.

UEKUSA K, SHIMADA N, YAZAWA K, YAMADA T, HASEGAWA M, SHIMADA NAYUTA, YAZAWA KENJI, YAMADA TAKATOSHI, HASEGAWA MASATAKA, UEKUSA KAZUTERU

Method for transferring graphene used for e.g. FET to flexible substrate, involves adhering metal substrate on flexible substrate by hot pressing process, removing metal residue using solvent, and drying metal substrate.

TANEMURA M, KALITA G

Graphene nano tape for use in electronic device, has inner walls that are provided with tape-shaped portion which is adjoined or attached for covering full length.

KAMISHIMA M, WATANABE H, NAGAMUNE T, KATADA A

Method for manufacturing graphene, involves forming a carbon containing layer on base layer by atomic-layer-deposition method, and amorphous carbon layer from carbon containing layer, and graphene from amorphous carbon layer.

KOJIMA E, KATAYAMA M, KANO K, OONISHI S, ONISHI S

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R