国家/地区 日本（61）
IPC部 C（61）
IPC大类 C01（61） H01（32） B01（15）
B82（11） C08（7） C23（7）
C09（4） C04（3） H05（3）
B29（2） B32（2） C02（2）
C25（2）
IPC小类 C01B（61）
IPC C01B031/02（61）
发明人 SAKAI T（7） MIYAZAKI H（5） YAMAZAKI Y（5）
NAITO K（4） KAJITA A（3） KATAGIRI M（3）
SAITO T（3） TAKAGI T（3） WADA M（3）
YOSHINAGA N（3） AKASAKA Y（2） AKITA M（2）
GARCIA S L J（2） GARCIA SAN LUIS J（2） HARADA Y（2）
公开年 2016（43） 2015（17）
申请年 2015（61）
专利权人 TOSHIBA KK（11） FUJITSU LTD（3） NAT INST ADV.（3） TOKYO ELECTR.（3）
UNIV NAGOYA（3） DAICEL CHEM .（2） GRAPHENE PLA.（2） KOTOBUKI TSU.（2）
REPSOL SA（2） SEMICONDUCTO.（2） TOSHIBA CORP（2） UNIV SHINSHU（2）

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z

Manufacture of porous graphene filter used in filter apparatus, involves providing filters having pores formed by substituting portion of carbon atom by atom produced from source containing pyridine, within filter mainframe.

KWON G, KIM H

Manufacture of graphene layer laminated-diamond substrate used for semiconductor devices, involves contacting diamond substrate with metal material made of nickel, iron, cobalt, copper and chromium, heating and cooling diamond substrate.

TSUBOTA T, NAKAO M

Method of partially oxidizing carbon material for producing graphene oxide involves reacting carbon material which contains graphite, multilayer graphene, and/or single layer graphene with peroxide.

ISOBE Y, OTSUKA Y

Graphene oxide used as electroconductive material, thermoelectric material and electrode material, is in laminated form, and has oxidation degree, electroconductivity and thermal conductivity of specified value.

ISOBE Y

Low-reflection graphene used in e.g. optical component, comprises graphene layer having surface parallel to specific direction, and another graphene layer in direction which intersects specified direction, where both layers form recess.

UEKUSA K, SHIMADA N, YAZAWA K, YAMADA T, HASEGAWA M, SHIMADA NAYUTA, YAZAWA KENJI, YAMADA TAKATOSHI, HASEGAWA MASATAKA, UEKUSA KAZUTERU

Mixed conductivity oxidized graphene sheet exhibits value with both equivalent proton conductivity and electronic-conduction rates measured at specific temperature.

KIDA T, MATSUMOTO Y, HATAKEYAMA K, MIYAMOTO A

Manufacture method of semiconductor device, involves forming graphene interconnect by patterning graphene film into which dopant is introduced.

WADA M, YAMAZAKI Y, MIYAZAKI H, KAJITA A, SAITO T, ISOBAYASHI A, ISHIKURA T, KATAGIRI M, SAKAI T

Obtaining graphene oxide, used to manufacture graphene oxide films, comprises adding an acid and a salt to graphite for obtaining graphite oxide, and exfoliating the graphite oxide by mixing it.

ZURUTUZA ELORZA A, ALONSO RODRIGUEZ B, ZURUTUZA E A, ALONSO R B, ELORZA A Z, RODRIGUEZ B A

Semiconductor device such as metal oxide semiconductor (MOS) transistor and capacitor, has graphene layer with first graphene layer and is provided on second catalyst region.

SAITO T, KITAMURA M, SAKATA A, WADA M, KAJITA A, SAKAI T