国家/地区 韩国（22）
IPC部 C（22） H（16） B（14）
G（4）
IPC大类 C01（22）
IPC小类 C01B（22） C23C（20） H01L（10）
B82Y（7） B01J（6） B32B（6）
C23F（5） H01B（5） B05D（4）
C30B（2） H01M（2）
IPC C01B032/184（22）
发明人 IFUKU R（2） KIM K S（2） MATSUMOTO T（2）
PARK J（2） PARKJAEHYUN（2） WHANG D（2）
WHANG D M（2）
公开年 2016（3） 2021（3） 2011（2） 2012（2） 2017（2） 2018（2） 2022（2）
申请年 2015（3）  2022（3）  2010（2）  2011（2）  2016（2）  2017（2）  2018（2）  2021（2） 
专利权人 KOREA INST S.（3） TOKYO ELECTR.（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Manufacture of shadow mask, involves forming buffer layer, depositing metal layer, forming amorphous carbon layer and crystalline carbon layer, removing amorphous carbon layer and metal layer, and separating buffer layer and crystalline carbon layer.

MOON S I, KWON Y, WOOK Y B, MOON J, KIM K S, LEE S M

Manufacturing wrinkled graphene comprises immersing polymeric substrate, wrinkled graphene, polystyrene sulfonic acid, or polystyrene substrate in water to remove polystyrene substrate by dissolving polystyrene sulfonic acid substrate.

HONG S, NARUTE P, NARUTEPHRASANT

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Transferring graphene involves forming graphene on first substrate, forming polymer precursor mixture on second substrate, providing graphene oppositely to second substrate having polymer precursor mixture.

GU T J, JANG W, SEO Y, WHANG D, WHANG D M, SEO Y M, JANG W S

Method for manufacturing diamond-graphene hybrid thermal management material, involves converting predetermined thickness of partial area of one side or both sides of diamond base material into vertical graphene, where diamond base material serves as heat spreader.

JU H, LEE J K, SU J

Synthesizing graphene pattern by physically adhering catalyst block including catalyst material to portion of growth substrate, and forming graphene thin film selectively at interface between catalyst block and growth substrate.

PARK J, SIM Y, KIM J, SIM Y M, PARKJAEHYUN

Method for directly synthesizing graphene on surface of target object, involves forming non-metal layer on support substrate, disposing target object in space above support substrate, and injecting carbon precursor to form graphene.

SONG Y, UDDIN M S, PARK J, PARKJAEHYUN

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T