国家/地区 世界知识产权组织（9） 美国（7） 日本（5） 中国（4） 台湾（4） 英国（2）
IPC部 C（18）
IPC大类 C01（18）
IPC小类 C01B（18）
IPC C01B032/186（18）
发明人 MATSUMOTO T（4） WADA M（4） IFUKU R（3）
BYUN K（2） DIXON S（2） GUINEY I（2）
KABUKI N（2） LEE C（2） LEE E（2）
LEE S（2） LI Y（2） SHIN H（2）
SHIN K（2） SONG H（2）
公开年 2022（18）
申请年 2022（10）  2021（7） 
专利权人 TOKYO ELECTR.（5） PARAGRAF LTD（2） SAMSUNG ELEC.（2）

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Method for preparing graphene metal composite material useful in field of alloy preparation for electrical, mechanical, and thermodynamic applications, comprises e.g. growing graphene on surface of metal material, heating, and applying pressure to metal material grown with graphene.

QU Y, TAN H, WANG W, SHEN D

Preparing graphene copper composite material useful in supercapacitors and motor drive devices, comprises e.g. pre-setting multi-layer copper foil in hot pressing chamber, adopting chemical vapor deposition, preparing graphene film on copper foil surface, and sintering graphene-copper.

GONG M, ZHAO M, LI M, CHEN C, CHEN Q, YANG W, LI Y, WANG Y, LIU B, PEI Z, ZHANG X, LIANG J

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN