国家/地区 中国（28）
IPC部 C（28）
IPC大类 C23（28） C01（12） H01（9）
C22（4） C25（4） B82（3）
B01（2） B22（2） B32（2）
C21（2） C30（2）
IPC小类 C23C（28） C01B（11） H01L（8）
B82Y（3） C22F（3） B22F（2）
B32B（2） C01G（2） C21D（2）
C25D（2） C25F（2） C30B（2）
IPC C23C016/02（28）
发明人 CHEN H（2） CHEN Y（2） LI X（2）
LIU Z（2） NARKEVICIUTE I（2） SHEN X（2）
SHIN H（2） SHIN H J（2） VARADARAJAN B N（2）
WANG Q（2） WANG X（2） ZHANG M（2）
公开年 2021（28）
申请年 2020（13）  2021（13）  2019（2） 
专利权人 LAM RES CORP（2） SAMSUNG ELEC.（2）

Preparation of graphene metamaterial based on flat two-dimensional structure substrate involves using chemical vapor deposition method to generate graphene metamaterial with two-dimensional micro-nano mechanism.

YANG H, WU Z

Preparation of cast-in-situ growth graphene-reinforced copper composite material used in e.g. civil application, involves reducing surface of copper powder, carrying out radio frequency plasma enhanced chemical vapor deposition, smelting sample, continuously stirring, and cooling.

HUANG P, ZHENG Z, WANG F

Preparing clean double-layer and few-layer graphene film, comprises placing substrate in atmosphere containing first oxidizing gas, annealing, placing substrate in reaction mixed gas containing reducing gas, a carbon source and a second oxidation gas, and heating to growth temperature.

LI G, ZHANG Y, LIU X, ZHANG M, GAO X, ZHANG J, PENG H, LIU Z

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Method for production of atomic bilayer nanotape, involves oxidizing portion of monolayer to provide oxidized portion, and removing oxidized portion to provide atomic layer nanotape comprising transition metal dichalcogenide material.

HARUTYUNYAN A R, LI X

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Processing gear pair surface comprises carrying out chemical and mechanical polishing of gear pair prototype, coupling coating layer with base lubricating oil with anti-friction and wear additive and adding oil into gear box body.

LI J, LUO J, ZHANG R, SUN S

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Determining optimal ratio of metal atoms in two-dimensional material growth alloy catalyst comprises e.g. forming first metal catalyst layer, forming second metal catalyst layer, and annealing to fuse first and second metal catalyst layers.

CHENG C, LI L, CHEN H, HUANG B