国家/地区 韩国（28）
IPC部 C（28） H（12） B（10）
G（2）
IPC大类 C23（28） C01（22） H01（12）
B01（7） B82（3） C25（3）
B32（2）
IPC小类 C23C（28） C01B（22） B01J（6）
H01B（6） H01L（4） B32B（2）
B82Y（2） C23F（2） C25D（2）
H01M（2）
IPC C23C016/06（28）
发明人 JUNG M（2） KIM K H（2） KIM T（2）
LEE J（2） PARK S（2） SHIN H（2）
WON D K（2） YOON J（2） YOON J H（2）
公开年 2014（8） 2013（7） 2015（4） 2021（2） 2022（2）
申请年 2012（9）  2013（6）  2015（3）  2020（3）  2014（2） 
专利权人 KOREA ADVANC.（4） UNIV SUNGKYU.（4） HANWHA AEROS.（3） SAMSUNG TECH.（3）
HANWHA TECHW.（2） LG ELECTRONI.（2） SAMSUNG ELEC.（2） SRC CORP（2）

Anode active material comprises carbon material, and silicon structure attached to carbon material, where silicon structure includes silicon nanoparticle, metal thin film formed on surface of silicon nanoparticle, and graphene coated on surface of metal thin film.

KIM Y H, SON M W, KIM Y, SUN M

Depositing thin film, comprises depositing graphene oxide film on first surface of substrate, and depositing first haze film on graphene oxide layer.

YOON S Y, YOOK J, JAI L H, SHIM W P

Formation of MXene layer on metal layer involves forming metal layer on substrate, supplying gas containing X-type compound to metal layer, and forming MXene-based layer on the metal layer.

SHIN U C

Producing octahedral transition metal dichalcogenides involves forming transition metal layer on substrate and injecting chalcogenide-containing gas onto the substrate together with plasma treatment.

VINIT K, KIM H U, LEE J, SEOK H, KIM T, KIM T S, SEOK H H, WOO K H, CANADEVINIT

Composition useful as catalysts and electrodes, comprises a nanoporous carbon powder comprising nanopores having disposed in it copper metal nanostructures and an elemental copper nanowires.

NAGEL C J, BRODEUR C L, NAZEL C A J, BRODARD C L

Multilayer barrier thin film comprises graphene layer, first inorganic barrier layer position on graphene layer, organic barrier layer positioned on first inorganic barrier layer, and second inorganic barrier layer on organic barrier layer.

KIMHYUNGKEUN, CHO S M, KIM K S

Producing graphene structure useful for transistor and photo detectors, comprises e.g. forming an aluminum pattern on a substrate, forming a graphene layer on substrate and aluminum pattern, and depositing a metal layer on graphene layer.

DONG J L, JONG C Y

Production of integrated layer of highly oriented halogenated graphene sheets or molecules used as dielectric material component for microelectronic devices involves preparing graphene oxide dispersion or gel having graphene oxide sheets.

ZHAMU A, JANG B Z, ZHAMUARUNA

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H