国家/地区 世界知识产权组织（15）
IPC部 C（15） H（11） B（2）
F（2）
IPC大类 C23（15）
IPC小类 C23C（15） C01B（9） H01L（9）
B82Y（2） C30B（2） H01M（2）
IPC C23C016/26（15）
发明人 IFUKU R（3） MATSUMOTO T（3） SHARMA K（3）
WADA M（3） BADCOCK T J（2） DIXON S（2）
GUINEY I（2） KABUKI N（2） VARADARAJAN B N（2）
YAMADA H（2）
公开年 2022（9） 2023（6）
申请年 2022（15）
专利权人 TOKYO ELECTR.（4） LAM RES CORP（3） PARAGRAF LTD（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Depositing nano-graphene comprises flowing hydrocarbon precursors into reaction chamber to adsorb onto metal layer of substrate at specific temperature, where metal layer interacts with adsorbed hydrocarbon precursor.

SHARMA K, VARADARAJAN B N

Producing coated nano-ordered carbon particles used in anode within rechargeable battery including sodium-ion batteries and other metal-ion batteries, involve exposing carbon-containing material to expanding agent to produce expanded carbonaceous particles during expanding process.

ENTERKIN J A, WORFOLK B J, ZHANG L

Forming dual damascene structure on semiconductor substrate, involves selectively depositing carbon layer on exposed metal surface.

PARBATANI A, VAN SCHRAVENDIJK B J, VARADARAJAN B N, NARKEVICIUTE I, SRINIVASAN E, SHARMA K, KNARR R, SCHMITZ S, RAMANAN V, NOGAMI T, NGUYEN S V, HUANG H, SHOBHA H K, LI J, PEETHELA C B, EDELSTEIN D C

Formation of graphene layer for semiconductor device, involves exposing substrate comprising conductive and dielectric materials to plasma to clean conductive material, and exposing substrate to another plasma to form graphene layer.

MEBARKI B, CHUA T C, VALENCIA C W, LEE J J, TANG X, CHEN X

Composite material comprises substrate and coating on substrate, where coating comprises diamond-like carbon and carbonaceous multi-layered nanoparticulate.

YANG L, NEVILLE A, BINTI NIK ROSELEY N R, BRITTAIN R N, LISKIEWICZ T W

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Processing substrates by providing semiconductor substrate, which comprises metal layer formed in dielectric layer and barrier layer between metal layer and dielectric layer, depositing graphene on exposed metal surface, depositing inhibitor layer and depositing dielectric material.

HAUSMANN D M, RAMNANI P G, SHARMA K, LEMAIRE P C, MAHOROWALA A P

Forming graphene layer structure, comprises providing growth substrate having growth surface, and forming graphene layer on growth surface by chemical vapor deposition, where growth surface is formed of material e.g. yttrium-stabilized zirconia.

DIXON S, GUINEY I, THOMAS S, GRIFFIN R M, BADCOCK T J