国家/地区 中国（5） 日本（5） 美国（2）
IPC部 C（10）
IPC大类 C23（10）
IPC小类 C23C（10）
IPC C23C016/26（10）
发明人 AIDA H（4） AOTA N（4） LI Z（2）
ZHANG Y（2）
公开年 2017（10）
申请年 2016（7）  2017（2） 
专利权人 NAMIKI SEIMI.（4） SHANGHAI INS.（2）

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Use of graphene as protective material for high-iron suspension wire, and preventing corrosion and oxidation of high-iron suspension wire.

SHI Y, BI H

High temperature process chamber vertical arrangement of graphene continuous growth apparatus, has second high temperature process chamber and receiving cooling chamber guide roll received on graphene substrate receiving roll.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Graphene film used for manufacture of composite for transistor, has wrinkle density of less than preset value.

AOTA N, AIDA H

Composite comprises single crystal sapphire substrate having film surface with surface roughness below preset value, metal film grown on film formation surface, and graphene film grown on metal film.

AOTA N, AIDA H

Composite used for electrode of transistor used in flexible device, consists of single crystal sapphire substrate having dislocation density less than preset value, metal film grown on substrate, and graphene film grown on metal film.

AOTA N, AIDA H

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Preparing silicon carbide-graphene film with epitaxial growth involves pre-treating silicon carbide-graphene substrate by washing substrate in upward face, and putting substrate facing upward into epitaxial growth device.

LI Z