国家/地区 日本（17）
IPC部 B（17）
IPC大类 B01（17）
IPC小类 B01J（17）
IPC C23C016/26（17）
发明人 MATSUMOTO T（3） BEDWORTH P V（2） HEISE S E（2）
IFUKU R（2） SINTON S W（2） SWETT J L（2）
ZHANG X（2）
公开年 2016（4） 2011（2） 2013（2） 2014（2） 2017（2） 2018（2）
申请年 2010（3）  2014（3）  2016（3）  2012（2）  2015（2） 
专利权人 TOKYO ELECTR.（3） LOCKHEED MAR.（2） SAMSUNG ELEC.（2）

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Perforated sheet of graphene-based material having an area, comprises perforated single layer of graphene and many perforations in single layer of graphene located over the area of the single layer of graphene.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Graphene nano tape for use in electronic device, has inner walls that are provided with tape-shaped portion which is adjoined or attached for covering full length.

KAMISHIMA M, WATANABE H, NAGAMUNE T, KATADA A

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y