国家/地区 中国（94） 美国（22） 世界知识产权组织（18） 韩国（15） 台湾（8） 日本（7） 欧洲专利局（EPO）（6） 英国（5） 德国（3）
IPC部 C（139）
IPC大类 C23（139）
IPC小类 C23C（139）
IPC C23C016/26（139）
发明人 MA Y（11） SHI H（9） DUAN Y（8）
LI X（8） SHAO L（8） SHEN H（8）
ZHANG Y（8） HUANG D（7） LI Z（7）
ZHANG X（7） LI Y（6） CAO H（5）
CHEN Q（5） DIXON S（5） LI J（5）
公开年 2022（139）
申请年 2022（68）  2021（53）  2020（18） 
专利权人 SHANGHAI XIN.（9） ZHEJIANG CHI.（9） CHINESE ACAD.（8） CHONGQING GR.（8）
TOKYO ELECTR.（7） BEIJING GRAP.（5） PARAGRAF LTD（5） UNIV PEKING（5）
CRRC IND RES.（4） SAMSUNG ELEC.（4） APPLIED MATE.（3） CHANGZHOU SI.（3）
JIANGSU JIAN.（3） ANHUI AEROSP.（2） BEIJING GRAP.（2） BEIJING TECH.（2）
CHANGZHOU 2D.（2） CHINA NUCLEA.（2） DAEJOO ELECT.（2） SONGAM SYSCO.（2）

Method for preparing metal-graphene composite material by using electronic component, involves preparing metal-graphene composite material by hot-pressing sintering, and applying pulse current to metal substrate to perform surface heat treatment to metal substrate.

WANG X, HUO Y, LI J, CAO Z, XIAO Z

Preparing copper-based graphene composite material comprises growing graphene film on surface of copper foil by chemical vapor deposition, stacking, using ultrasonic welding technology to weld stacked components, and removing stress and annealing welded stack assembly.

WANG E, WANG X, HE M, ZHANG R, ZHAO C, HU X, LIU K, FU Y

Preparing metal-based graphene composite material, comprises mixing graphene slurry and metal powder to form mixed slurry, and forming mixed slurry into metal-based graphene composite material by chemical vapor deposition in oxygen-free environment.

QIAN T, CAO H, SHEN H, LV X, MA Y

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H

Preparing diamond/graphene/carbon nano-tube full-carbon base composite material, comprises e.g. plating diamond surface with catalytic layer, and using direct current injection plasma arc furnace to quickly heat diamond plated with layer.

CHEN L, LIU J, WEI J, YANG Z, LIU Y, YUAN X, ZHENG Y, REN F, LI C

Mechanical hand for film continuous graphene film continuous scale deposition device, has screw rod whose end is installed on driving device, and push rod slidably mounted on screw rod along length direction of screw rod.

XIE S

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Conductor material, has metal matrix, first carbon allotrope distributed within metal matrix, where first carbon allotrope is aligned with direction of electric current flow through length of metal matrix, and metal matrix and first carbon allotrope have electrical interfacial coherency.

KRAFT F F

Growing single-layer graphene useful in semiconductor device involves fixing copper foil on cathode, placing in acidic electrolyte, applying voltage between working and counter electrodes, placing copper foil and growing single layer graphene on both sides of copper foil by chemical vapor deposition.

SHEN H, MA Y

Controllable preparation method of palladium-based hydrogen sensitive material, involves loading palladium nano-particles on graphene film by self-reduction deposition method at room temperature and immersing film on substrate in chemical plating solution.

LIU H, ZHANG P, LU Z, ZHANG J, CHEN Z, GUO J, YANG C, CHENG Q, LEI H, SONG T, LIN W, CAO C, CAO X, LIU M, PING X