国家/地区 美国（8） 日本（5） 韩国（5） 世界知识产权组织（4） 中国（2）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C23C016/26（10）
发明人
公开年 2011（6） 2012（3）
申请年 2010（10）
专利权人 SAMSUNG ELEC.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Formation of graphene-based device used in electronic field, involves depositing carbon on substrate having dielectric material, annealing carbon-deposited substrate, and forming ordered graphene on dielectric material.

KELBER J A, GADDAM S S, BJELKEVIG C L

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A

Formation of transparent conductive film for, e.g. solar cells, involves guiding camphor vapors on heated substrate, thermally decomposing vapors and forming graphene sheet, peeling sheet by etching, and affixing peeled sheet on target.

KALITA G, UMENO M, WAKITA K

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Graphene manufacturing device for forming graphene thin film on silicon wafer, has substrate lifting unit for ascending and descending substrate, and gas supply part for supplying carbon source and purging gas to vacuum chamber.

CHOI K J, WOONG C S

Depositing a graphene film involves supplying a gaseous-phase graphene source to a substrate, adsorbing the graphene source to form an adsorbed layer on the substrate, and activating the adsorbed layer by heating the adsorbed layer.

AHN S, KANG S Y

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Substrate for fabrication of semiconductor element, has graphene layer formed by chemical vapor deposition using metal catalyst, compound or alloying layer and oxide layer for diffusing metal catalyst sequentially formed on metal layer.

HIURA H, TSUKAGOSHI K

Making graphene used for coating graphene-coatable materials by providing starting material comprising carbonaceous material sulfur and excluding transition metal and heating starting material.

CHENG I F, MCILROY D N, FOUTCH J, GRIFFITHS P R

Process for elaboration of graphene, useful e.g. in nanoelectronics, comprises depositing layer comprising amorphous carbon on substrate and annealing layer by photonic- and/or electronic-irradiation to obtain layer comprising graphene.

ZENASNI A, AJIJEU J