国家/地区 韩国（16）
IPC部 C（16）
IPC大类 C01（16） C23（16） H01（7）
B01（6） B82（3） C30（2）
IPC小类 C01B（16）
IPC C23C016/26（16）
发明人 BONG H（2） CHO K（2） JOUVRAY A（2）
TEO K B K（2）
公开年 2015（10） 2014（5）
申请年 2014（16）
专利权人 AIXTRON SE（2） CENT ADVANCE.（2）

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Manufacturing graphene, comprises manufacturing superimposed body by overlapping the stacked thin film made of a metal catalyst layer; and preparing graphene on a metal catalyst layer by performing a chemical vapor deposition.

CHO K, BONG H

Production of doped graphene pattern during manufacture of pn-diode, involves supplying n-type carbon precursor on substrate, forming amorphous carbon pattern by irradiating electron beam or ion beam to precursor and heat-treating.

BAE D J, KIM K S, LEE I B

Forming graphene film comprises placing substrate and carbon source into reaction chamber having gas inlet, and heating carbon source under flow of hydrocarbon-free gas to convert portion of carbon source into graphene film on the substrate.

DIJON J, TYURNINA A

Thermally managed electronic component such as graphene-based heat sinks and thermal conduits, has thermal management coating that comprises layer of aligned carbon nanoparticles which is mounted on graphene coating layer.

LI A W, HUNT J H, HOWE W R

Forming graphene, useful as e.g. electrical or thermal conductive substrate, comprises placing and heating a substrate within reaction chamber, introducing carbon precursor into chamber, and forming graphene layer on surface of substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z

Direct method of growing patterned graphene involves forming mask layer having hole exposing site in which graphene is formed, on substrate, forming catalytic metal layer on mask layer, and forming graphene on catalytic metal layer.

PARK S J, KWON H J, KANG J W, KIM N Y

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y