国家/地区 韩国（30）
IPC部 C（30）
IPC大类 C01（30） C23（30） H01（15）
B82（11） B01（10） B32（8）
B05（2） H05（2）
IPC小类 C01B（30）
IPC C23C016/26（30）
发明人 HONG B H（7） WON D K（5） HONG B（4）
AHN J（3） AHN J H（3） CHOI I S（3）
CHOI J（3） CHOI J Y（3） KIM H（3）
LEE K J（3） SHIN H J（3） WOO Y S（3）
YOON S M（3） AN K S（2） BAE S（2）
公开年 2012（30）
申请年 2011（16）  2012（10）  2010（4） 
专利权人 SAMSUNG TECH.（8） HANWHA TECHW.（6） KOREA ADV IN.（5） SAMSUNG ELEC.（5）
UNIV SUNGKYU.（4） GRAPHENE SQU.（3） UNIV SUNGKYU.（3） HANWHA AEROS.（2）
KOREA ADVANC.（2） KOREA RES IN.（2） POSTECH ACAD.（2） UNIV SUNGKYU.（2）
UNIV SUNGKYU.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene used for e.g. graphene conducting wire, for semiconductor device e.g. memory, involves controlling electrical characteristics by doping nitrogen to graphene.

LEE S S, JUNG M W, PARK B K, JEONG S J, LEE Y K, CHUNG T M, KIM C G, AN K S, SHIN Y S, JUNG D

Method of growing graphene involves injecting carbon on inorganic substrate, forming graphite catalyst layer on carbon-injected inorganic substrate, forming multilayer board on substrate and growing graphene on multilayer board.

YOON S M, CHOI J Y, WOO Y S, SHIN H J, LEE S K

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Manufacture of graphene sheet involves interconnecting warped surfaces of catalyst substrate, growing graphene on one surface of warped surfaces, and separating bonded substrates.

JIN J, JEON S, LEE Y, HONG Y

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Graphene manufacturing device has heating portion anneals processed substrate in which amorphous carbon is deposited.

GWAN W D, YEONG K N, WON D K, KIM N Y

Synthesis of graphene involves preparing dielectric substrate, mounting electric furnace on substrate, increasing reaction temperature, and injecting carbon precursor on substrate.

SON M H, SONG H J, CHOI H C