国家/地区 中国（23）
IPC部 C（23） H（6） B（5）
IPC大类 C23（23）
IPC小类 C23C（23） C01B（12） B82Y（4）
H01L（4） B01J（3） C25D（3）
C08K（2）
IPC C23C016/48（23）
发明人 CHIU P（2） FENG Y（2） HUANG Y（2）
LIN K（2） QIU B（2） YE X（2）
ZHANG C（2） ZHANG J（2） ZHANG L（2）
公开年 2017（3） 2021（3） 2022（3） 2014（2） 2016（2） 2018（2） 2019（2）
申请年 2022（4）  2014（3）  2016（2）  2017（2）  2018（2）  2019（2）  2020（2）  2021（2） 
专利权人 UNIV SHAANXI.（2） UNIV XIAMEN（2）

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Technology for preparing carbon-based material film based on common action of bias voltage and laser, comprises plasma chemical vapor deposition device based on adding bias and laser control.

ZHU J, WANG S, YANG D, DI M, WANG B

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H

Method for in-situ growth of graphene film on nickel-plated surface of copper metal substrate by laser useful in production, transportation involves pre-coating different solid carbon source on copper-nickel alloy coating, and realizing in-situ growth of graphene film by different types of laser.

CHEN M, QI M, QIANG H, ZHENG X, YE X

Method for preparing graphene film by chemical vapor deposition electron irradiation, involves attracting electrons in carbon plasma to surface of substrate to assist growth, forming electron irradiation, and depositing carbon plasma on substrate to generate graphene carbon film.

DIAO D, CHEN X, WANG C

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Composition useful as catalysts and electrodes, comprises a nanoporous carbon powder comprising nanopores having disposed in it copper metal nanostructures and an elemental copper nanowires.

NAGEL C J, BRODEUR C L, NAZEL C A J, BRODARD C L

In-situ growing of graphene on metal surface based on laser comprises e.g. introducing powdered metal nickel on the metal substrate using laser, pre-coating the solid carbon source on the alloy coating and irradiating using laser.

YE X, DONG R, YANG Y, SUO G, FENG L, HOU X, ZHANG L

Device for producing graphene heterojunction by chemical vapor deposition, comprises vertically movable upper heater, lower heater, support frame arranged on lower heater, tray arranged on side of support frame and suspension catalyst unit.

KONG W, ZHAO Y

Solid polymer carbon source electrochemical deposition method used in preparation of conductive coating and graphene material, involves opening left plug, and taking out graphene or graphite coated substrate.

YANG W, GAO X, TAN J, CHENG L, DING Y