国家/地区 中国（13） 世界知识产权组织（3） 日本（2）
IPC部 C（17）
IPC大类 C23（17）
IPC小类 C23C（17）
IPC C23C016/50（17）
发明人 IFUKU R（2） MATSUMOTO T（2） WANG X（2）
YAMADA H（2） ZHANG Y（2）
公开年 2022（9） 2023（8）
申请年 2022（17）
专利权人 CHINESE ACAD.（2） TOKYO ELECTR.（2） UNIV ZHEJIAN.（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Preparation of additive used for preparing copper or copper alloy profile, involves coating graphene on raw material of copper or copper alloy powder surface, and performing high-energy beam additive manufacturing using obtained graphene modified copper or copper alloy powder.

LIU B, HOU H, LI T

Depositing nano-graphene comprises flowing hydrocarbon precursors into reaction chamber to adsorb onto metal layer of substrate at specific temperature, where metal layer interacts with adsorbed hydrocarbon precursor.

SHARMA K, VARADARAJAN B N

Preparing a sponge nickel-loaded nitrogen and fluorine double-doped vertical graphene useful in e.g. preparing anode and cathode materials for lithium-sulfur batteries, comprises e.g. obtaining Ni(AC)2 aqueous solution, adding N2H4H2O and mixing to obtain reaction solution.

TU J, WANG X, QIU Z, XIA X

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Processing central supporting rod useful for vapor deposition coating device by making ceramic material in rod body, installing supporting cap, mixing polyvinyl alcohol, water in glue, solidifying isolation in contact layer, applying glue on supporting cap, inserting locating rod in locating hole.

LIU W

Flexible pressure sensor based on two-dimensional quantum tunneling force-sensitive mechanism, has conformal carbon nano-film composed of graphene-structure of nano-wall and flexible substrate.

CHENG G, WEI D

Preparing diamond/graphene/carbon nano-tube full-carbon base composite material, comprises e.g. plating diamond surface with catalytic layer, and using direct current injection plasma arc furnace to quickly heat diamond plated with layer.

CHEN L, LIU J, WEI J, YANG Z, LIU Y, YUAN X, ZHENG Y, REN F, LI C

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N