国家/地区 韩国（26）
IPC部 C（26）
IPC大类 C30（26）
IPC小类 C30B（26）
IPC C30B025/18（26）
发明人 CHOI J（2） CHOI J Y（2） HONG B H（2）
PARK H（2） SHIN H（2） SHIN H J（2）
YOON S（2）
公开年 2021（7） 2014（3） 2022（3） 2009（2） 2011（2） 2016（2） 2017（2）
申请年 2016（4）  2020（4）  2021（4）  2013（3）  2008（2） 
专利权人 GRAPHENE SQU.（2） SAMSUNG ELEC.（2） UNIV HANYANG.（2） UNIV SEOUL N.（2）
UNIV SUNGKYU.（2）

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Producing transition metal chalcogen compound useful in semiconductor devices comprises forming graphene thin film, forming transition metal chalcogen compound on graphene thin film from transition metal precursor and chalcogen precursor.

HOON L S, HONG B H, KIM J W, CHO S P, BAEKWON P, LEE G S, IL J, LIM E H

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Producing epitaxial structure useful in flexible electronic device comprises providing multilayer graphene layer having through-holes, providing single crystal substrate having graphene layer formed and growing semiconductor structure.

HONG Y, JUNG J S, JUNGJOONSUCK

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Growing single crystal graphene on a metal substrate comprises placing metal substrate and alkali metal halide in a reactor, inducing chemical vapor deposition of graphene on the metal substrate by heating.

BAKWONYIL, KIM S H

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM

Thin film growth structure comprises a board, fluid support layer, base that is formed on an upper surface of flowable support layer, substrate, and flowable support layer which is thin film formed of material that maintains a liquid state.

LEE I, WUK L W

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X