国家/地区 中国（5） 韩国（5） 美国（4） 日本（2） 世界知识产权组织（2）
IPC部 C（11）
IPC大类 C30（11）
IPC小类 C30B（11）
IPC C30B025/18（11）
发明人
公开年 2021（11）
申请年 2021（6）  2020（5） 
专利权人

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Manufacturing semiconductor by forming mask layer which covers substrate, laminating graphene layer on surface of substrate, and making surface of graphene layer crystal-grow a semiconductor crystal.

NARUTSUKA S

Graphene-based reusable zinc oxide single crystal substrate useful for preparing zinc oxide film comprises zinc oxide/graphene substrate including zinc oxide single crystal substrate and at least two layers of graphene.

YE Z, WANG P, PAN X, WANG N

Producing epitaxial structure useful in flexible electronic device comprises providing multilayer graphene layer having through-holes, providing single crystal substrate having graphene layer formed and growing semiconductor structure.

HONG Y, JUNG J S, JUNGJOONSUCK

Fabricating single-crystalline ionically conductive materials for electrochemical cell by forming material on two-dimensional material over growth substrate and removing single-crystalline ionically conductive material from substrate.

KIM J, KONG W, BAE S, KONG L, KUM H, SHAOHORN Y, YU Y

Growing single crystal gallium nitride film on arbitrary self-supporting substrate involves nitride deposition on any self-supporting substrate, transferring the two-dimensional material with single crystal hexagonal structure.

YANG X, SHEN B, LIU D, SHEN J, CAI Z, CHEN Z, MA C

Making bilayer graphene domain used to make optoelectronic devices, comprises e.g. dissolving decaborane into phenyl methyl ether, and coating obtained decaborane/phenyl methyl ether solution to cleaned metal foil/film layer.

LING D, LIU J, WEI D, ZHANG Q, HE X

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM

Preparing structure having transition metal sulfide film, involves providing substrate, forming graphene layer on surface of substrate, and forming transition metal sulfide thin film on surface of graphene layer.

NI J, HUANG W, XUE C

Thin film growth structure comprises a board, fluid support layer, base that is formed on an upper surface of flowable support layer, substrate, and flowable support layer which is thin film formed of material that maintains a liquid state.

LEE I, WUK L W