国家/地区 美国（34） 世界知识产权组织（29） 韩国（23） 日本（20） 欧洲专利局（EPO）（18） 中国（15） 台湾（11） 印度（6） 加拿大（4） 英国（3） 墨西哥（3） 俄罗斯（3）
IPC部 C（47）
IPC大类 C01（47）
IPC小类 C01B（47）
IPC C30B029/02（47）
发明人 VEERASAMY V S（4） DIXON S（3） GUINEY I（3）
VEERASAMY V（3） BERRY V（2） CHOI J Y（2）
JANG B Z（2） SEACRIST M R（2） THOMAS S（2）
YOON S（2）
公开年 2013（7） 2014（7） 2011（4） 2015（4） 2017（4） 2021（4） 2022（4） 2009（3） 2023（3） 2016（2） 2018（2）
申请年 2012（6）  2013（6）  2009（5）  2016（5）  2021（5）  2014（4）  2020（3）  2022（3）  2011（2）  2015（2）  2017（2） 
专利权人 GUARDIAN IND.（4） GUARDIAN GLA.（3） GUARDIAN IND（3） PARAGRAF LTD（3）
MAX PLANCK G.（2） NAMIKI SEIMI.（2） NANOTEK INST.（2） SAMSUNG ELEC.（2）
SUNEDISON SE.（2）

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Fabrication of graphene used for electrode of e.g. sandwich-style capacitor, involves providing patterned substrate, depositing graphene oxide on patterned substrate, and reducing graphene oxide to graphene.

CHAICHI A, GARTIA M R

Single crystal metal film for conductive film and substrate for growth of two-dimensional nanomaterial, is embedded with seed crystals containing seeds oriented in preset direction or seed crystals single crystallized in preset direction.

PARK H B, ROH J S, JANG J K, CHANG J K

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M