国家/地区 中国（8） 美国（2）
IPC部 C（13） H（4） B（2）
IPC大类 C30（13） C01（5） H01（4）
C23（3）
IPC小类 C30B（13）
IPC C30B029/02（13）
发明人 CHEN X（2） LI X（2） SHAO C（2）
XU X（2） ZHANG J（2）
公开年 2022（13）
申请年 2021（13）
专利权人 UNIV SHANDON.（2）

Growing graphene nanoribbon involves depositing aromatic molecular seeds from gas phase onto surface of growth substrate, and growing graphene nanoribbon from aromatic molecular seeds via chemical vapor deposition, where growth substrate is germanium substrate.

JACOBBERGER R M, WAY A J, ARNOLD M S

Preparing composite dimension carbon atom framework van der Waals homogeneous structure temperature control physical defogging film comprises e.g. preparing powder-shaped carbon nanotube material, spraying cellulose acetate by connecting cellulose acetate solution and obtaining defogging film.

JIANG X, DONG H, TIAN B

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Preparation method of a large domain graphene single crystal, involves annealing sapphire/metal substrate with oxygen-containing gas and providing growth gas according to mode of increasing proportion gradient of growth gas, and growing on sapphire/metal substrate to obtain graphene single crystal.

LIU Z, PENG H, CAO Y, WANG Y, DU Y, TANG J, YAN R

Preparing high purity single crystal graphene in large scale, involves preparing silk fibroin solution, dropping on quartz sheet, spin coating, drying, placing quartz sheet and high molecular carbon-containing organic film in reaction cavity, processing, calcining, naturally cooling and taking out.

ZHANG Y, ZHENG P, ZHENG L, CHEN W, ZHENG H

Preparing near free state single-layer graphene based on silicon carbide single crystal substrate comprises e.g. pre-processing surface of silicon carbide single crystal substrate wafer, heating pre-processed substrate silicon surface, performing hydrogen etching, and obtaining substrate.

XU X, XIE X, XIAO L, SHAO C, LI X, CHEN X, ZHANG F

Preparation of ultrathin beta-radiation source for micro-components, involves using polymethyl methacrylate/graphene film and platinum sheet, and depositing beta-radiation source on graphene using solution of e.g. beta-radiation source.

ZHANG J, LI C, WANG X, XU P, FENG H, CHEN Z, YANG Y, WU W, ZHOU C, LUO T

Epitaxially growing uniform graphene more than six inches on silicon carbide substrate, comprises grinding, polishing, and cleaning silicon surface of silicon carbide wafer, vacuumizing high-temperature furnace chamber, heating, feeding argon gas and naturally cooling to room temperature.

GUO F, LI X, XU X, SHAO C, CHEN X

Graphite substrate useful for manufacturing light emitting diode epitaxial wafer in semiconductor field, comprises graphite disc and multiple annular isolation layer, where surface of graphite disc is provided with multiple grooves for containing epitaxial wafer.

LI P, LU X, XIAO Y, GUO B, DING T, GE Y