国家/地区 中国（11）
IPC部 C（11）
IPC大类 H01（11） C23（7） C01（6）
B01（2） C30（2） H05（2）
IPC小类 H01J（11）
IPC H01J037/32（11）
发明人 NARKEVICIUTE I（2） VARADARAJAN B N（2）
公开年 2021（7） 2022（2）
申请年 2020（4）  2021（4） 
专利权人 LAM RES CORP（2）

Graphene processing device for providing low energy injection ion for use in e.g. biological medicine application, has upper electrode net and the lower electrode net through which plasma generated by plasma coil discharge passes so as to process sample located on sample seat in processing chamber.

WANG W, JIANG C, WANG Y, WANG H

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Semiconductor component useful in plasma reaction device and plasma etching process of process gas e.g. carbon tetrafluoride and oxygen, comprises conductive heat conducting material filled in pores of first corrosion resistant coating.

NI T, CHEN X, ZHU S

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Growing deep UV LED epitaxial structure used in optoelectronic manufacturing, involves depositing isolation layer on graphite disc surface, growing epitaxial structure of deep UV LED on isolation layer surface, and adhering residue on surface of isolation layer to disc by using adhesive tape.

MEI J, YIN Y, GONG C, DING T

Graphene powder surface modified plasma reaction device comprises shell and rotating structure comprising roller and rotating motor, where rotating structure is set in vacuum cavity in shell.

HUANG L, JIAN X

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Using deposition system involves loading wafer into processing chamber equipped with RF system, supplying aromatic hydrocarbon precursor into processing chamber, turning on RF power of RF system to decompose aromatic hydrocarbon precursor into active radicals.

WU C, NI I, HSU Y, HUANG J, XU Y, WU Z

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Reactor system for producing carbon-containing powder, has microwave energy source, control circuit having output to generate control signal to adjust pulse frequency of microwave energy, voltage generator, and field-enhancing waveguide.

STOWELL M W, PHAM T V, ANZELMO B H, RISO T, RIESLE T, FAN D