国家/地区 美国（11） 韩国（10） 中国（4） 欧洲专利局（EPO）（4） 日本（3） 台湾（3） 世界知识产权组织（3） 印度（2）
IPC部 B（16）
IPC大类 B01（16）
IPC小类 B01J（16）
IPC G03F007/20（7） C01B032/194（6） G03F001/62（6）
B01J019/08（5） G03F007/004（5） B82Y030/00（4）
C01B031/02（4） C01B031/04（4） C01B032/184（4）
G03F001/22（4） B82Y040/00（3） C01B032/186（3）
B01J021/18（2） B01J023/28（2） B01J035/00（2）
发明人 KIM H Y（4） MI K H（4） KIM H K（3）
KIM H M（3） KIM S G（3） CHO J W（2）
GILJE S S（2） JEONJUNHYUCK（2） JOJINWOO（2）
KIM H（2） KIM S K（2） KIMHYUNGKEUN（2）
LEE E（2） LEE G H（2） LI Y（2）
公开年 2022（4） 2014（2） 2017（2） 2019（2） 2021（2）
申请年 2019（3）  2020（2）  2021（2）  2022（2） 
专利权人 KOREA ELECTR.（4） GILJE S S（2）

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Manufacturing graphene wrinkles using three-dimensional structure patterning process comprises etching transition metal thin film to form three-dimensional pattern and inserting into chemical vapor deposition chamber to synthesize graphene.

KIM J, WIMALANANDA M D S, LEE J M

Preparing pellicle for extreme UV exposure with graphene defect healing layer, involves forming support layer of silicon nitride material on silicon substrate, and forming core layer of graphene material on support layer.

KIMHYUNGKEUN, MI K H, LEE W S, YANG H S, JOJINWOO, KIM B, JEONJUNHYUCK, LEE G H, KIM H Y, JEON J H, KIM S G, CHO J W, KIM H M, KIM H K

Directly growing multilayer graphene used in a pellicle for extreme ultraviolet lithography, involves forming small-layer graphene on SiN substrate, forming metal catalyst layer on small-layer graphene, and forming an amorphous carbon layer.

KIMHYUNGKEUN, MI K H, KIM H Y, LEE G H, SUNG K H, KIM H M, KIM S G, KIM H K

Ternary cadmium sulfide/zinc oxide/reduced graphene oxide nanocomposite used as photocatalyst, comprises cadmium sulfide/zinc oxide/reduced graphene oxide.

PALVE A M, AJAY L S

Photoresin used for projection micro stereolithography, comprises a solvent, a photoinitiator, a crosslinkable polymer precursor, and a precursor for graphene, metal oxide or metal chalcogenide.

WORSLEY M A, CAMPBELL P G, DUOSS E B, OAKDALE J S, SPADACCINI C M, HENSLEIGH R

Catalyst for synthesizing graphene used for multi-layered pellicle stack, pellicle and lithography apparatus comprises layer comprising a transition metal, base layer and interlayer which is disposed between base layer and first layer.

KURGANOVA E, GIESBERS A J, KLEIN A L, NASALEVICH M A, NOTENBOOM A W, PETER M, VAN ZWOL P, VLES D F, VOLLEBREGT S, VOORTHUIJZEN W, GIESBERS A J M, VANZWOL P

Photoreducing graphene oxide to graphene, comprises obtaining a composition comprising graphene oxide and a photoinitiator, and irradiating the composition with UV radiation for reducing the graphene oxide.

MANGADLAO J D, ADVINCULA R