国家/地区 中国（13）
IPC部 C（13）
IPC大类 H01（13） C23（7） C30（5）
B82（3） C01（3） C09（3）
B01（2） B22（2） B24（2）
C25（2）
IPC小类 H01L（13） C23C（7） C30B（5）
B82Y（3） C01B（3） B01J（2）
B22F（2） B24B（2） C09K（2）
C25D（2） H01M（2）
IPC H01L021/02（13）
发明人 FIMLAND B M（2） GABEN F（2） MUNSHI M（2）
SHEN X（2） SHIN H（2） SHIN H J（2）
WEMAN H（2）
公开年 2021（12）
申请年 2020（13）
专利权人 SAMSUNG ELEC.（3） CRAYONANO AS（2）

Manufacture of lithium-ion battery used for e.g. phone and laptop, involves e.g. depositing dense layer comprising anode, cathode and/or electrolyte, by supplying substrate and suspension of non-agglomerated nanoparticles of material having preset size, and performing densification of dried layer.

GABEN F

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Producing graphene sensor element used for analyzing gas sample, by forming graphene layer on growth substrate, applying fluoropolymer coating layer, removing substrate, transferring onto substrate, and removing fluoropolymer coating layer.

SHERWOOD G J, NELSON J T, SU Q, BUHLMANN P P J, ZHEN X, KOESTER S J

Composition used for fabricating semiconductor structure on semiconductor device for removing metal-containing layer of pellicle structure, comprises water, oxidizing agent(s), and acid(s).

CHEN C, CHANG C, LEE Y, LIU W D, WINDOW C, LEE W, LU W, LIU W, LI Y, ZHANG Z, CHEN Z

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM

Preparing structure having transition metal sulfide film, involves providing substrate, forming graphene layer on surface of substrate, and forming transition metal sulfide thin film on surface of graphene layer.

NI J, HUANG W, XUE C

Carbon abrasive used to polish slurry, and manufacture semiconductor device contains carbon nanoparticle, and positively charged polymer, and/or positively charged oligomer disposed on surface of carbon nanoparticle.

TAKAI K, KIM D Y, KIM D

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

Regulating number of molybdenum disulfide layers in molybdenum disulfide/graphene heterojunction comprises using methane and hydrogen, placing polished copper foil into quartz tube and graphene-transferred silicon dioxide/ substrate.

XU K, ZHOU Y, LI P