国家/地区 美国（22）
IPC部 C（22）
IPC大类 H01（22） C23（15） C01（7）
B82（5） C09（4） C08（3）
C25（3） C30（3） B01（2）
B05（2） B22（2） C04（2）
IPC小类 H01L（22） C23C（15） C01B（7）
B82Y（5） C09D（3） C25D（3）
C30B（3） B01J（2） B05D（2）
B22F（2） C04B（2） C08K（2）
H01M（2）
IPC H01L021/02（22）
发明人 SHIN H（6） SHIN H J（5） BYUN K（3）
BYUN K E（3） CHO Y（3） CHO Y C（3）
LEE C（3） LEE C S（3） SHIN K（3）
SHIN K W（3） AHN W（2） AHN W S（2）
FIMLAND B M（2） GABEN F（2） KIM H（2）
公开年 2021（18） 2020（4）
申请年 2020（22）
专利权人 SAMSUNG ELEC.（8） CRAYONANO AS（2） UNIV SUNGKYU.（2）

Growing two-dimensional transition metal chalcogenide film for manufacturing e.g. diode, involves placing patterned metal layer on substrate surface, supplying chalcogen precursor and transition metal precursor to chamber, and evacuating.

LEE E, AHN W, KIM H, LEE H, LEE H S, KIM H S, AHN W S, HA L

Manufacture of lithium-ion battery used for e.g. phone and laptop, involves e.g. depositing dense layer comprising anode, cathode and/or electrolyte, by supplying substrate and suspension of non-agglomerated nanoparticles of material having preset size, and performing densification of dried layer.

GABEN F

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Manufacturing semiconductor device involves heating second layer of first unit includes first layer, second layer, and third layer. The first layer includes support layer, second layer includes compound containing carbon.

MIGITA T

Selective growth and pattering of graphene by depositing fine-grained metal or alloy on oxidized silicon substrate, annealing the metal to change the structure of the metal to amorphous, mixed and/or single texture, performing hydrocarbon dissolution, growing and releasing graphene layer.

ZAKAR E S

Graphene structure used in electronic device, comprises substrate, and directly grown graphene directly grown on surface of substrate and has controlled surface energy, which has increased surface energy of directly grown graphene.

LEE C, LEE S, SHIN H, BYUN K, SHIN K, SHIN K W, BYUN K E, SHIN H J, LEE S Y, LEE C S

Composition used in forming thin film, comprises chemical contrast pattern having first region of first chemistry on background of second chemistry, and microphase-separated block copolymer material overlying the chemical contrast pattern.

ARNOLD M, JACOBBERGER R, NEALEY P, XIONG S, CHANG T, MA Z, NEALEY P F

Method for forming graphene, involves preparing a substrate in a reaction chamber, performing a first growth process of growing multiple graphene aggregates apart from each other on the substrate at a first growth rate.

CHO Y, LEE C, KIM C, SHIN H, SHIN K, NGUYEN V L, SHIN K W, SHIN H J, LEE C S, CHO Y C

Masking block used e.g. to form pattern comprises base substrate, gamma-alumina thin film disposed on base substrate, and hexagonal boron nitride thin film doped with carbon and oxygen and disposed on gamma-alumina thin film.

LEE D, PARK J, PARKJAEHYUN, LEE D J

Producing graphene sensor element used for analyzing gas sample, by forming graphene layer on growth substrate, applying fluoropolymer coating layer, removing substrate, transferring onto substrate, and removing fluoropolymer coating layer.

SHERWOOD G J, NELSON J T, SU Q, BUHLMANN P P J, ZHEN X, KOESTER S J