国家/地区 中国（15）
IPC部 C（15）
IPC大类 H01（15） C30（9） C23（8）
C01（5）
IPC小类 H01L（15） C30B（9） C23C（8）
C01B（5）
IPC H01L021/02（15）
发明人 BEN J（2） CHEN Y（2） DENG J（2）
HAO Y（2） JIANG K（2） LI D（2）
SUN X（2） ZHANG J（2） ZHANG S（2）
公开年 2022（10） 2023（5）
申请年 2022（15）
专利权人 CHANGCHUN IN.（2） TAIWAN SEMIC.（2） UNIV BEIJING.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Van der Waals epitaxy method of high-quality aluminum gallium nitride materials on amorphous substrate, comprises e.g. transferring and processing first two-dimensional material layer on amorphous substrate, transferring second material layer on processed layer, performing hydrogenation passivation.

LI D, JIANG K, BEN J, ZHANG S, CHEN Y, LYU B, SUN X

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Preparing three-dimensional homogeneous epitaxial structure used in preparation of optoelectronic device or electronic device, involves covering two-dimensional material layer on surface of nitride single crystal substrate, and processing one micro nano-scale blind hole on surface of material layer.

YAN Q, WANG G

Preparation of wafer-level self-supporting cadmium-tellurium thin film used in electronic device, involves cleaning two-dimensional material/sapphire substrate, assembling two-dimensional material/sapphire substrate and support by molten metal material, and growing cadmium telluride thin film.

WANG J, WANG X, TANG X, CAO H, BAI W

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Preparation method of surface P-type gallium oxide, involves preparing single-layer polar hydrogen fluoride graphene by surface functional growth, constructing heterojunction interface between gallium oxides/polar fluoride graphene, and obtaining surface-P-type gallium oxide without lattice damage.

HAO Y, ZHANG J, GAO X, LIN Z, SU J, YUAN H, CHANG J

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Nitride templates based on metal substrates comprises metal substrate, two-dimensional material film, which is located on metal substrate one side, inert material pattern mask layer, nitride epitaxial layer, which is located on inert material pattern mask layer side away from the metal substrate.

ZHANG S, BEN J, JIANG K, LI D, CHEN Y, SUN X