国家/地区 日本（9）
IPC部 C（9）
IPC大类 C01（9） H01（6） B82（3）
C23（2）
IPC小类 C01B（9）
IPC C01B032/15（9）
发明人 IFUKU R（2） MATSUMOTO T（2）
公开年 2018（9）
申请年 2016（5）  2017（3） 
专利权人 TOKYO ELECTR.（2）

Anisotropic etching of graphene used as electronic material, involves generating hydrogen plasma using microwave plasma, and anisotropically etching graphene using generated hydrogen plasma.

IFUKU R, MATSUMOTO T

Metal chalcogenide layer-grown graphene comprises metal chalcogenide layer formed by dispersing metal chalcogenide powder on graphene film grown in horizontal and vertical directions by evaporating in high-purity gas atmosphere.

DAYARAM M R, TANEMURA M, KALITA G

Graphene nano-ribbon for e.g. magnetoresistive device, has zigzag-type edge structure in both ends of width direction, and in which one edge portion comprises methyl group and boron, and another edge portion comprises methyl group/nitrogen.

JIPPO H, SATO S

Fluorinated graphene oxide for e.g. super capacitor electrode, has reduced amount of nitrogen and boron.

KASHIWAKURA W, MOGI A

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Manufacturing multilayer graphene for multilayer graphene laminated body used for electronic devices involves layer replacement process which crystallizes carbon film and carries out layer replacement of metal film and carbon film.

TOKO K, SUEMASU T

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Preparation of graphene in formation of graphene film on insulated substrate, involves providing oxidation mild atmosphere, and growing graphene in substrate in pressure-reduced atmosphere by vapor phase growth method.

KANEKO S, KATO C, TANAKA S, OZAWA T, YASUHARA S

Graphene structure for use in a semiconductor device, comprises a multilayer graphene that is laminated with graphene sheets, where three interlayer materials are presented between the graphene sheets of the multilayer graphene.

MIYAZAKI H, YOSHIDA T, KATAGIRI M, YAMAZAKI Y, SAKAI T