国家/地区 美国（14） 世界知识产权组织（11） 韩国（9） 中国（7） 欧洲专利局（EPO）（7） 日本（6） 波兰（3） 俄罗斯（3） 印度（2） 墨西哥（2） 台湾（2）
IPC部 B（16）
IPC大类 B82（16）
IPC小类 C01B（16）
IPC C01B032/188（16）
发明人 CIOCHON P（2） KOLODZIEJ J（2） VEERASAMY V（2）
VEERASAMY V S（2）
公开年 2011（4） 2021（3） 2012（2） 2015（2）
申请年 2020（4）  2011（3）  2009（2）  2012（2） 
专利权人 GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2） UNIV JAGIELL.（2）
UNIV SUNGKYU.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Growing coherent nanowhiskers coated with two-dimensional monolayers on surface of coherent nanowhiskers, comprises growing graphene layers on outer and inner surfaces of whiskers in crystallization zone, and blowing with inert gas.

MAKSIMOVSKY S N

Optical absorption material used for light absorption composition comprises film-like carbon structure which consists of graphenes having plate-shaped aggregate where the film-like carbon structure does not contain a metallic element.

FURUBAYASHI H, IKEDA T, KANO S, AOYAGI Y

Obtaining a silicon carbide (SiC)-graphene surface composite with controlled surface morphology for use in e.g., electronics by subjecting SiC substrate, after initial preparation, to annealing in beam of silicon atoms and cooling.

CIOCHON P, KOLODZIEJ J

Composition used in flexible near infrared photodetector, comprises nanowire.

IYER S, NALAMATI S R K, LI J

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Manufacturing method for nano structure antireflection film, involves forming antireflection film using graphene as growth substrate, after forming hexagonal graphene honeycomb lattice on silicon dioxide layer.

ZHA G

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A