国家/地区 中国（8） 美国（4） 日本（3） 韩国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 C（11）
IPC大类 C23（11） H01（4） B01（2）
C01（2） C09（2）
IPC小类 C23C（11） H01L（3） C01B（2）
C09D（2） H01J（2）
IPC C23C014/34（11）
发明人
公开年 2021（11）
申请年 2021（7）  2020（4） 
专利权人

Loaded body for fuel cell, has sputtering source, pulse power supply, inert gas supply unit and nanocluster growth cell, where when nanoclusters are produced in vapor phase using nanocluster generating device, and nanoclusters are supported on carrier, each carriers loaded with nanoclusters.

NAKAJIMA A, TSUNOYAMA H, UNO M, GUNJI H, ANDO T, TSUKAMOTO K, TONA M, HIRATA N

Multi-layer graphene laminate used in electronic devices, comprises catalyst metal layer and stacked structure comprising graphene layer grown on one surface of catalyst metal layer.

YOON S G, IREH H

Preparation of high-efficiency antibacterial coatings based on physical vapor deposition, involves spraying treatment agent, placing substrate treated in vacuum furnace, spraying polyurethane paint and spraying polyurethane topcoat, baking substrate and curing.

CHI S

Preparing carbon-based device comprises e.g. transferring multilayer graphene film synthesized by chemical vapor deposition, and placing analytical pure liquid bromine together with transferred multilayer graphene or graphite film.

YU X, TIAN Z, LI M, YU D, REN Z, REN L, FU Y

Method for processing high-strength corrosion-resistant stainless steel pipe fittings, involves taking pretreatment pipe fittings, performing ultrasonic rolling on outer surface, washing pretreatment pipe fittings with deionized water after rolling and vacuum drying pretreatment pipe fittings.

XU J, HU X, SANG C, RUAN J, ZHOU Q

Vanadium pentoxide heat-sensitive film with sandwich structure used for silicon-based semiconductor, comprises substrate layer, buffer layer, and heat-sensitive layer including vanadium pentoxide layers and carrier concentration increasing layer located between adjacent vanadium pentoxide layers.

HUANG L, LU H, MA Z, WANG C, FANG M, CAI G, GAO J, HUANG S

Using deposition system involves loading wafer into processing chamber equipped with RF system, supplying aromatic hydrocarbon precursor into processing chamber, turning on RF power of RF system to decompose aromatic hydrocarbon precursor into active radicals.

WU C, NI I, HSU Y, HUANG J, XU Y, WU Z

Graphene-copper target material comprises target assembly includes outer copper back plate provided with groove and graphene copper target main body whose outer wall provided with graphene plating layer.

LI G, ZHANG C

Preparation of doped titanium dioxide ceramic film involves taking vascular stent comprising medical magnesium alloy as substrate, preparing magnesium oxide transition layer, mixing butyl titanate and graphene and coating.

XIAO Y, CHEN Z, ZHOU J, TAN Y, ZHAO J, YAO L

Formation of film involves preparing substrate containing conductive film formed on base substrate, forming composite layer containing graphene layer, and electrically connecting conductive film with former film through composite layer.

NI Z, MATSUMOTO T, IFUKU R, YOU W