国家/地区 中国（32）
IPC部 C（32）
IPC大类 C23（32） C01（18） H01（13）
B82（6） C25（5） B01（4）
C30（4） C04（2） G01（2）
H05（2）
IPC小类 C23C（32） C01B（18） H01L（9）
B82Y（6） C25D（5） C30B（4）
B01J（3） H01J（3） H01R（3）
C04B（2） C23F（2） H01B（2）
IPC C23C016/04（32）
发明人 WANG Y（5） NARKEVICIUTE I（3） VARADARAJAN B N（3）
JIN M（2） SHARMA K（2） SHIMIZU T（2）
YING R（2） ZHANG L（2） ZHANG Y（2）
公开年 2021（10） 2016（4） 2013（3） 2014（3） 2017（3） 2018（3） 2022（3）
申请年 2021（8）  2017（5）  2013（3）  2020（3）  2011（2）  2012（2）  2014（2）  2015（2）  2016（2）  2022（2） 
专利权人 LAM RES CORP（3） HANGZHOU LON.（2） YAZAKI CORP（2）

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Directly growing patterned graphite on integrated circuit chip, involves cutting ultra-thin copper foil, pressing, placing chip sample in thermal chemical vapor deposition system, dipping into copper corrosion liquid, etching lower copper through a poly(methyl methacrylate) layer and drying.

HU L, DENG J, QIAN F, XIE Y, XU C

Manufacturing graphene of pressure sensor, comprises e.g. manufacturing sensor structure, manufacturing mask plate of each layer of sensor structure and depositing insulating layer on silicon substrate surface.

WU X, RUI L, ZHANG Q, LU J, LI Y

Preparation of graphene metamaterial based on flat two-dimensional structure substrate involves using chemical vapor deposition method to generate graphene metamaterial with two-dimensional micro-nano mechanism.

YANG H, WU Z

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Semiconductor wafer carrying structure used in organic metal chemical vapour deposition device, has protective film layer that covers surface, carrier plate that is arranged on carrier structure, and patterned coating layer that is formed on carrier plate.

LAI Y, WU J, CHEN J

Connector pair for use with electrical device, has first connector that includes first electrical contact unit which is provided with graphene layer on metal base material, and second connector includes second electrical contact unit electrically connected to first connector by graphene layer.

KUBO T, SEKI K, OKADA M, HATAKEYAMA K, KOGA K, SHIMIZU T, YE N, KAWAI H, KAWAI Y, GUAN H