国家/地区 中国（56） 美国（42） 韩国（29） 世界知识产权组织（22） 日本（11） 台湾（7） 欧洲专利局（EPO）（6） 德国（3）
IPC部 C（100）
IPC大类 C23（100）
IPC小类 C23C（100）
IPC C23C016/50（100）
发明人 LEE C（7） LEE C S（6） SHIN H（6）
BYUN K（5） LEE E（5） LI C（5）
LI Y（5） SHIN H J（5） SHIN K（5）
BYUN K E（4） KIM C（4） MATSUMOTO T（4）
WANG X（4） ZHANG L（4） ZHANG X（4）
公开年 2021（19） 2022（19） 2016（12） 2020（11） 2023（9） 2017（8） 2013（5） 2018（5） 2012（4） 2019（3） 2014（2） 2015（2）
申请年 2021（18）  2022（17）  2020（16）  2016（13）  2015（7）  2019（7）  2011（4）  2014（4）  2017（4）  2012（3）  2010（2）  2013（2）  2018（2） 
专利权人 SAMSUNG ELEC.（7） TOKYO ELECTR.（5） APPLIED MATE.（3） UNIV SINGAPO.（3）
UNIV ZHEJIAN.（3） BEIJING GRAP.（2） CHINESE ACAD.（2） GRAPHENE SQU.（2）
KUK IL GRAPH.（2） LAM RES CORP（2） PURDUE RES F.（2） SHANGHAI INS.（2）
SHANGHAI INS.（2） UNIV CENT SO.（2） UNIV IND AC.（2） UNIV PEKING（2）

Chemical vapor deposition preparation process for graphene paper of lead-acid battery grid, involves heating and softening graphene paper, bending into set shape through mold, and coating graphene paper surface by chemical vapor deposition.

LI S, LI Z

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Preparation of additive used for preparing copper or copper alloy profile, involves coating graphene on raw material of copper or copper alloy powder surface, and performing high-energy beam additive manufacturing using obtained graphene modified copper or copper alloy powder.

LIU B, HOU H, LI T

Depositing nano-graphene comprises flowing hydrocarbon precursors into reaction chamber to adsorb onto metal layer of substrate at specific temperature, where metal layer interacts with adsorbed hydrocarbon precursor.

SHARMA K, VARADARAJAN B N

Preparing a sponge nickel-loaded nitrogen and fluorine double-doped vertical graphene useful in e.g. preparing anode and cathode materials for lithium-sulfur batteries, comprises e.g. obtaining Ni(AC)2 aqueous solution, adding N2H4H2O and mixing to obtain reaction solution.

TU J, WANG X, QIU Z, XIA X

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Processing central supporting rod useful for vapor deposition coating device by making ceramic material in rod body, installing supporting cap, mixing polyvinyl alcohol, water in glue, solidifying isolation in contact layer, applying glue on supporting cap, inserting locating rod in locating hole.

LIU W

Flexible pressure sensor based on two-dimensional quantum tunneling force-sensitive mechanism, has conformal carbon nano-film composed of graphene-structure of nano-wall and flexible substrate.

CHENG G, WEI D

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H