国家/地区 中国（44） 美国（24） 韩国（16） 世界知识产权组织（14） 日本（9） 欧洲专利局（EPO）（8） 台湾（8） 英国（4） 印度（2）
IPC部 C（63）
IPC大类 C30（63）
IPC小类 C30B（63）
IPC C30B025/18（63）
发明人 ZHANG J（8） HAO Y（6） NING J（6）
WANG D（5） CHAI Z（3） CHEN Z（3）
DIXON S（3） GUINEY I（3） HAN D（3）
KIM J（3） LI X（3） SHEN B（3）
YAN Y（3） YANG X（3） FAN S（2）
公开年 2022（12） 2021（11） 2023（7） 2015（6） 2013（5） 2017（5） 2014（4） 2016（3） 2018（3） 2009（2） 2020（2）
申请年 2021（14）  2022（9）  2016（6）  2020（6）  2012（5）  2014（4）  2017（4）  2013（3）  2015（3）  2018（2）  2023（2） 
专利权人 UNIV XIDIAN（6） PARAGRAF LTD（3） UNIV PEKING（3） CEC COMPOUND.（2）
HON HAI PREC.（2） HONGFUJIN PR.（2） INT BUSINESS.（2） JIANGSU ADVA.（2）
MASSACHUSETT.（2） SAMSUNG ELEC.（2） SHANGHAI TEC.（2） UNIV TSINGHU.（2）

Reducing damage to substrate when using plasma-enhanced atomic layer deposition to grow thin film involves depositing oxide film on cleaned substrate using water/ozone source and metal source, and depositing nitride film using plasma source.

HU Y, ZHU X, TIAN F, YANG J, LIU H, QIU P, WEI H, ZHENG X, QIU H

Van der Waals epitaxy method of high-quality aluminum gallium nitride materials on amorphous substrate, comprises e.g. transferring and processing first two-dimensional material layer on amorphous substrate, transferring second material layer on processed layer, performing hydrogenation passivation.

LI D, JIANG K, BEN J, ZHANG S, CHEN Y, LYU B, SUN X

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Preparing three-dimensional homogeneous epitaxial structure used in preparation of optoelectronic device or electronic device, involves covering two-dimensional material layer on surface of nitride single crystal substrate, and processing one micro nano-scale blind hole on surface of material layer.

YAN Q, WANG G

Preparation of wafer-level self-supporting cadmium-tellurium thin film used in electronic device, involves cleaning two-dimensional material/sapphire substrate, assembling two-dimensional material/sapphire substrate and support by molten metal material, and growing cadmium telluride thin film.

WANG J, WANG X, TANG X, CAO H, BAI W

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Visible-near infrared wide spectrum photoelectric detector is independent device and/or integrated in circuit, and contains flexible substrate, transparent conductive electrode, active layer, p-type ohmic contact layer, upper electrode layer, and silicon nitride passivation layer.

CHEN H, WANG W, DENG Z, LI X, JIA H

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J