国家/地区 日本（11） 美国（8） 韩国（6） 世界知识产权组织（6） 中国（4） 欧洲专利局（EPO）（4） 台湾（3）
IPC部 C（12）
IPC大类 H01（12） C01（10） C07（3）
B82（2） C08（2）
IPC小类 H01L（12） C01B（10） C07C（3）
B82Y（2） C07B（2） H01B（2）
IPC H01L051/05（12）
发明人 NOZAWA K（2）
公开年 2014（12）
申请年 2013（8）  2012（2）  2014（2） 
专利权人 PANASONIC CO.（2）

Manufacture of substrate for electronic apparatus, involves forming silicon carbide layer on silicon substrate, planarizing upper surface of silicon carbide layer, and forming graphene layer in upper surface of silicon carbide layer.

SAI J, SUEMITSU M, FUKIDOME H, MAKABE I, NAKABAYASHI T, TATENO Y

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T

Semiconductor structure for semiconductor device comprises graphene material and graphene-lattice matching material over at least a portion of graphene material.

MEADE R E, PANDEY S C

Semiconductor device has channel layer whose right edge is bonded with substrate and left edge is floated from substrate, and that is made of graphene by ether bond or ester bond.

JIPPO H

Laminate used for field effect transistor, has mica, self-assembled film formed on mica, and graphene film formed on self-assembled film in which each of molecules has hydrophobic principal chain.

FUJII TAKESHI, SATO MARIKO, FUJII T, SATO M

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

Composition, useful to manufacture film used in transmissive electrode for organic electronic device, comprises, in solvent preparation, non-tubular graphene material, electrically conductive polymer including polythiophenes, and additive.

VIVILLE P, SOLOUKHIN V, KHOUSAKOUN E, DELIGNE N, COPPEE S, GRIVEI E, LAZZARONI R

Manufacture of semiconductor element for electronic device, involves forming catalyst layer, removing portion which opposes portion of back surface, forming graphene, adjoining portion of back surface to substrate side and transferring.

KOJIMA E