国家/地区 美国（25） 世界知识产权组织（14） 韩国（12） 中国（11） 日本（11） 欧洲专利局（EPO）（8） 台湾（6） 香港（2）
IPC部 C（28）
IPC大类 C01（28）
IPC小类 C01B（28） H01L（28） B82Y（15）
C23C（6） B01J（4） B32B（4）
H01B（4） B05D（3） H01J（3）
B44C（2） B82B（2） C07C（2）
IPC H01L021/02（28）
发明人 LEE J（3） LEE J H（3） SHIN H（3）
JUNG Y（2） JUNG Y S（2） KIM Y（2）
KIM Y S（2） LEE C（2） LEE C S（2）
LEE D W（2） SHIN H J（2） WOO Y（2）
WOO Y S（2）
公开年 2014（15） 2013（10） 2015（3）
申请年 2013（28）
专利权人 SAMSUNG ELEC.（5） SHIN H（3） EMPIRE TECHN.（2） LEE J（2）
TOSHIBA KK（2） WOO Y（2）

Patterning of graphene oxide film used in production of electronic component, involves depositing graphene oxide film on substrate, reducing portion of film, and producing pattern of reduced graphene oxide area in graphene oxide film.

BORINI S, WEI D, WHITE R, BESSONOV A A

Etching method of graphene, involves etching exposed portions of graphene to form etched graphene structure, after applying resist to surface of graphene opposite to patterned substrate.

ANDERSON K, SJONG A

Method for growing germanium quantum point for preparing graphene-germanium quantum point composite material for e.g. LED, involves forming graphene layer on thin film, and performing graphene layer and germanium thin film annealing process.

LI Z, BAI B, YANG X, WANG X, XU Y, DAI Q, QIU X

Semiconductor structure for semiconductor device comprises graphene material and graphene-lattice matching material over at least a portion of graphene material.

MEADE R E, PANDEY S C

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Fabrication of graphene nanoribbon array for fabrication of e.g. field-effect transistor device, involves forming graphoepitaxy channel on graphene substrate, and forming layer of surface-modifying copolymer on channel.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, CHOI J W

Manufacturing graphene film comprises annealing first substrate in furnace filled with mixed gas, moving substrate into growing chamber of molecular beam epitaxy system, heating carbon source and depositing it on surface of substrate.

LIN S, LIN M, LIN S Y, LIN M Y

Transferring graphene to intermediate layer used for preparing graphene electric device, involves mixing polydimethylsiloxane glue with raw substrate, where polydimethylsiloxane glue is solidified into polydimethylsiloxane transition layer.

LI T, LIANG C, WANG W, WANG Y

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K

Transferring graphene films from substrate to another substrate, during manufacturing of e.g. touch display, involve forming material layer on part of surface of first substrate, and attaching second substrate to second surface of layer.

WILLNER B I, WILLNER B