国家/地区 韩国（22）
IPC部 C（22）
IPC大类 C01（22）
IPC小类 C01B（22）
IPC C23C016/06（22）
发明人 JUNG M（2） PARK S（2） SHIN H（2）
WON D K（2） YOON J（2） YOON J H（2）
公开年 2013（7） 2014（7） 2015（4）
申请年 2012（9）  2013（5）  2015（3）  2014（2） 
专利权人 KOREA ADVANC.（4） HANWHA AEROS.（3） SAMSUNG TECH.（3） UNIV SUNGKYU.（3）
HANWHA TECHW.（2） LG ELECTRONI.（2） SAMSUNG ELEC.（2）

Composition useful as catalysts and electrodes, comprises a nanoporous carbon powder comprising nanopores having disposed in it copper metal nanostructures and an elemental copper nanowires.

NAGEL C J, BRODEUR C L, NAZEL C A J, BRODARD C L

Producing graphene structure useful for transistor and photo detectors, comprises e.g. forming an aluminum pattern on a substrate, forming a graphene layer on substrate and aluminum pattern, and depositing a metal layer on graphene layer.

DONG J L, JONG C Y

Production of integrated layer of highly oriented halogenated graphene sheets or molecules used as dielectric material component for microelectronic devices involves preparing graphene oxide dispersion or gel having graphene oxide sheets.

ZHAMU A, JANG B Z, ZHAMUARUNA

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Synthesizing graphene using copper vapor, comprises preparing substrate, placing copper foil on substrate, forming copper vapor from copper foil, and contacting graphene precursor gas on substrate for synthesizing graphene on substrate.

CHOI H C, KIM H K, SONG I T

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Synthesis of graphene involves coating anti-corrosive material to surface of catalyst metal foil, placing catalyst metal foil coated with anti-corrosive material in chemical vapor deposition chamber and creating vacuum in chamber.

WON D K, KIM N Y