国家/地区 中国（10） 韩国（10） 美国（9） 日本（6） 欧洲专利局（EPO）（5） 世界知识产权组织（4） 台湾（3） 印度（2）
IPC部 C（22）
IPC大类 C01（22）
IPC小类 C01B（22） G03F（22） B82Y（7）
B01J（6） H01L（6） C23C（4）
B32B（2）
IPC C01B032/194（22）
发明人 KIM H Y（3） MI K H（3） KIM H（2）
KIM H K（2） KIM H M（2） KIM K S（2）
KIM S G（2） KIM S K（2） LEE G H（2）
LEE S M（2） SUNG K H（2） YOO C S（2）
公开年 2022（9） 2021（5） 2016（2） 2018（2） 2020（2）
申请年 2021（7）  2020（4）  2022（3）  2016（2）  2019（2） 
专利权人 KOREA ELECTR.（3）

Method for preparing graphene sub-nanoscale gap by feedback control electric breakdown, involves stopping voltage to apply to two ends of single-layer graphene nanoribbon when resistance of single-layer graphene nanoribbon reaches preset resistance to construct and obtain graphene sub-nanoscale gap.

SU M, HONG W, LIU J, ZHANG C, YUAN Z

Photoetching of erasable graphene involves photoetching oxidation graphene by laser processing, graphene, and performing oxygen plasma treatment to oxidized graphene after laser treatment.

GU M, ZHANG Q, CHEN X, LUAN H, WAN Z

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Manufacturing graphene thin film for pellicle material using ozone gas useful in semiconductor devices comprises forming graphene on the upper surface of substrate, exposing graphene layer to ozone, and heat-treating and etching.

LEE G H, KWON Y, WOOK Y B, MOON S I, MOON J, KIM K S, LEE S M

Manufacturing graphene wrinkles using three-dimensional structure patterning process comprises etching transition metal thin film to form three-dimensional pattern and inserting into chemical vapor deposition chamber to synthesize graphene.

KIM J, WIMALANANDA M D S, LEE J M

Producing nanosheet, used to produce reduced graphene oxide sheet, comprises e.g. spin-coating sheet with graphene oxide solution, setting area, and contacting basic material to patterning surface of patterned poly dimethylsiloxane stamp.

LEE J H

Method for preparing micro-nano composite of graphene quantum dot array, involves removing mask glue, annealing to remove residual glue, and etching to remove surface sacrificial layer to obtain final graphene array structure.

ZHAO Q, YANG Z, CHEN R, PENG F, YAN Z, CHANG Z, HUANG X

Removing polymethylmethacrylate (PMMA) from graphene surface by subjecting PMMA layer to deep UV light irradiation, treating irradiated PMMA layer to remove PMMA layer and drying cleaned layer located on substrate in stream of nitrogen gas.

ALEXEEVA N, KASALYNAS I

Pellicle film used in extreme UV lithography, comprises carbyne layer containing structure in which carbyne molecules are entangled by applying coating solution prepared by mixing carbyne molecules and solvent and drying.

CHOI J H, CHO S J, YU L, KIMCHUNG, SEO K, KIM K S, LEE S Y, MOON S Y, KIM C, SEO K W