国家/地区 美国（37） 世界知识产权组织（28） 韩国（25） 中国（22） 日本（18） 欧洲专利局（EPO）（9） 台湾（4） 英国（2）
IPC部 C（62）
IPC大类 C01（62） C23（62） B82（29）
H01（23） B32（19） B01（14）
C30（9） H05（8） B05（5）
B44（3） C25（3） B29（2）
D01（2） G02（2）
IPC小类 C01B（62）
IPC C23C016/26（62）
发明人 CHOI J（5） DING G（4） HONG B H（4）
XIE X（4） DENG P（3） GUO H（3）
JIANG M（3） KIM H（3） LEE J（3）
LEI T（3） ZHANG K（3） ZHANG Y（3）
CHOI B（2） CHOI B L（2） CHOI J Y（2）
公开年 2013（33） 2012（24） 2014（5）
申请年 2012（62）
专利权人 SAMSUNG ELEC.（5） UNIV SUNGKYU.（5） CHINESE ACAD.（4） HANWHA TECHW.（4）
SAMSUNG TECH.（4） DOKURITSU GY.（3） HANWHA AEROS.（3） SHANGHAI INS.（3）
UNIV SUNGKYU.（3） UNIV XIDIAN（3） CHOI J（2） DENG P（2）
FUJITSU LTD（2） GRAPHENE SQU.（2） GUO H（2） HONG B H（2）
KOREA ADV IN.（2） KOREA ADVANC.（2） KOREA INST S.（2） LEI T（2）

Manufacturing graphene coated steel plate, comprises generating plasma gas, passing gas through water or organic compound to generate functional group, binding functional group on surface of material, and coating graphene on surface.

YOO H J, KIM J K, LEE S K, JUNG Y G, KIM J S

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Apparatus for manufacturing graphene film used for e.g. transparent electrode, has system for supplying film-forming material gas containing carbon, stage and counter electrodes, and device for applying direct current pulse voltage.

TSUKAHARA N

Producing graphene film using fullerene derivative used in e.g. organic light-emitting diode comprises forming carbonized catalyst layer on substrate, laminating fullerene derivative solution on catalyst layer and performing heat treatment.

KIM C S, KANG J W, SEO J H

Method for forming graphene on substrate used in mechanical system, involves forming solution processed graphene on substrate so as to establish low friction wear surface.

SUMANT A V, ERDEMIR A, CHOI J, BERMAN D

MManufacturing three-dimensional structure of graphene useful in flexible display, comprises preparing mold, forming graphene layer on mold, forming support structure for covering first and second sides on graphene layer, and removing mold.

LEE S, BYUN N, JUNG M, LEE D, SEO B

Manufacture of graphene film used for e.g. gas barrier film, involves depositing graphene film on base material surface maintained at specified temperature and pressure by microwave surface wave plasma chemical vapor deposition method.

TSUGAWA K, YAMADA T, HASEGAWA M

Formation of graphene film used for e.g. electronic device, involves performing reduction process by heating metal film in atmosphere containing hydrogen gas, carrying out graphene film growth process, and cooling.

YOSHII S, NOZAWA K, MATSUKAWA N

Composition, useful in an electronic device, spintronic device or optoelectronic device, comprises ordered film of boron nitride containing multiple layers, where the film has a major surface, and a layer of graphene formed on major surface.

KELBER J A

Manufacture of graphene involves coating graphene oxide solution on substrate, drying coated graphene oxide solution on substrate, forming graphene oxide flakes, and growing graphene.

RHO J, PARK W, JUNG M, SEO B, MOON J