国家/地区 韩国（49） 美国（45） 中国（13） 欧洲专利局（EPO）（13） 日本（9） 世界知识产权组织（5）
IPC部 C（52）
IPC大类 C01（52）
IPC小类 C01B（52）
IPC C01B031/02（23） C01B031/04（21） H01L029/16（17）
B82Y030/00（15） B82Y040/00（15） C01B032/186（15）
C23C016/26（15） H01B001/04（12） H01L021/02（10）
B32B009/00（9） C23C016/02（7） C23C016/511（7）
H01L021/768（6） H01L029/06（6） B01J021/18（5）
发明人 SHIN H J（52）
公开年 2009（8） 2011（7） 2012（7） 2020（6） 2021（6） 2014（5） 2013（3） 2022（3） 2015（2） 2023（2）
申请年 2008（7）  2011（6）  2012（6）  2010（5）  2021（5）  2015（4）  2020（4）  2013（3）  2019（3）  2022（3）  2014（2）  2018（2） 
专利权人 SAMSUNG ELEC.（51） UNIV SUNGKYU.（12） UNIV SUNGKYU.（6） SHIN H（4）
UNIV SUNGKYU.（3） CHOI J（2） LEE J（2） PARK S（2）
UNIV SEOUL N.（2） WOO Y（2） YOON S（2）

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Soluble graphene quantum dot used in light-emitting material and organic light-emitting device, comprises anthracenyl N-alkyl maleimide functional group at edge.

SHIN H, NIU W, MUELLEN K, LIU J, WU F, FENG X, KIM S, LIANG P, WHOOPENG, MULLEN K, WENHUI N, SHIN H J

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Black phosphorus-two dimensional material complex for electronic device, includes first and second two-dimensional material layers being configured to be coupled to each other by van der Waals force, and black phosphorus sheet in which phosphorus atoms are covalently bonded.

YOON S, LEE C, HWANG H, SHIN H, SEOL M, SUK S H, SHIN H J, HWANGHYUNTAE, LEE C S, YUNE S I, YIN S, LI C, SHEN X

Method for measuring thickness of graphene layer directly grown on silicon substrate by using X-ray photoelectron spectroscopy (XPS), involves obtaining effective attenuation length from linear relationship between measurement results by transmission electron microscope and XPS.

LEE E K, CHO Y J, KIM S W, BYUN K, SONG H J, SHIN H J

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Apparatus for manufacturing graphene by using plasma, has gas supply for supplying reducing gas into reaction chamber at height from upper surface of substrate supporter in height direction of reaction chamber.

LEE C, LEE E, SHIN H, BYUN K, KIM S, BYUN K E, SHIN H J, LEE C S

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Method for forming graphene, involves preparing a substrate in a reaction chamber, performing a first growth process of growing multiple graphene aggregates apart from each other on the substrate at a first growth rate.

CHO Y, LEE C, KIM C, SHIN H, SHIN K, NGUYEN V L, SHIN K W, SHIN H J, LEE C S, CHO Y C